Browsing by Author "Zhang, Liyang"
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Publication Design and optical characterization of novel InGaN/GaN multiple quantum well structures by metal organic vapor phase epitaxy
Journal article2013, Japanese Journal of Applied Physics, 52, p.08JL10Publication Design and optical characterization of novel InGaN/GaN multiple quantum wells structures by metal organic vapor phase epitaxy
Oral presentation2012, International Workshop on Nitride Semiconductors - IWNPublication Growth and optimization of InGaN/InGaN multiple quantum wells by metal organic vapour phase epitaxy
; ;Cheng, Kai ;Zhang, Liyang ;Leys, Maarten ;Sijmus, Bram ;L'abbe, CarolineOral presentation2011, MRS Fall Meeting Symposium O: Compound Semiconductors for Generating, Emitting, and Manipulating EnergyPublication In situ bow monitoring: towards uniform blue and green InGaN/GaN quantum well structures grown on 100mm sapphire substrates by MOVPE
;Cheng, Kai ;Degroote, Stefan ;Leys, Maarten ;Zhang, Liyang ;Derluyn, JoffGermain, MarianneJournal article2010, Physica Status Solidi C, (7) 7_8, p.2082-2084Publication In situ bow monitoring: towards uniform blue and green InGaN/GaN quantum well structures grown on 100mm sapphire substrates by MOVPE
;Cheng, Kai ;Degroote, Stefan ;Leys, Maarten ;Zhang, Liyang ;Derluyn, JoffGermain, MarianneProceedings paper2009, 8th International Conference on Nitride Semiconductors - ICNS, 18/10/2009Publication Influence of growth parameters on Mg doping of GaN by molecular beam epitaxy
Oral presentation2010, MRS Spring Meeting Symposium EE: Defects in Inorganic Photovoltaic MaterialsPublication Mg doping of GaN by molecular beam epitaxy
Journal article2011, Journal of Physics D: Applied Physics, (44) 13, p.135406Publication Photoluminescence studies of polarization effects in InGaN/(In)GaN multiple quantum well structures
Journal article2012, Japanese Journal of Applied Physics, (51) 3, p.30207Publication Strain effects in GaN Epi-layers grown on different substrates by metal organic vapor phase epitaxy
Journal article2010, Journal of Applied Physics, (108) 7, p.73522Publication Structural characterization of N-face GaN epilayers grown on Ge (111) by plasma assisted molecular beam epitaxy
Journal article2013, CrystEngComm, 15, p.10590-10596Publication Two-color InGaN/GaN microfacet multiple-quantum well structures grown on Si substrate
Journal article2011-10, Journal of Applied Physics, (110) 8, p.83518