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Browsing by Author "Zhang, Liyang"

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    Design and optical characterization of novel InGaN/GaN multiple quantum well structures by metal organic vapor phase epitaxy

    Zhang, Liyang
    ;
    Lieten, Ruben  
    ;
    Latkowska, M.
    ;
    Baranowski, M.
    ;
    Kudrawiec, R.
    ;
    Cheng, K.
    ;
    Liang, Hu  
    Journal article
    2013, Japanese Journal of Applied Physics, 52, p.08JL10
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    Design and optical characterization of novel InGaN/GaN multiple quantum wells structures by metal organic vapor phase epitaxy

    Zhang, Liyang
    ;
    Cheng, Kai
    ;
    Liang, Hu  
    ;
    Lieten, Ruben  
    ;
    Latkowska, Magdalena
    ;
    Baranowski, Michal
    Oral presentation
    2012, International Workshop on Nitride Semiconductors - IWN
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    Growth and optimization of InGaN/InGaN multiple quantum wells by metal organic vapour phase epitaxy

    Liang, Hu  
    ;
    Cheng, Kai
    ;
    Zhang, Liyang
    ;
    Leys, Maarten
    ;
    Sijmus, Bram
    ;
    L'abbe, Caroline
    ;
    Dekoster, Johan  
    Oral presentation
    2011, MRS Fall Meeting Symposium O: Compound Semiconductors for Generating, Emitting, and Manipulating Energy
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    In situ bow monitoring: towards uniform blue and green InGaN/GaN quantum well structures grown on 100mm sapphire substrates by MOVPE

    Cheng, Kai
    ;
    Degroote, Stefan
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    Leys, Maarten
    ;
    Zhang, Liyang
    ;
    Derluyn, Joff
    ;
    Germain, Marianne
    Journal article
    2010, Physica Status Solidi C, (7) 7_8, p.2082-2084
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    In situ bow monitoring: towards uniform blue and green InGaN/GaN quantum well structures grown on 100mm sapphire substrates by MOVPE

    Cheng, Kai
    ;
    Degroote, Stefan
    ;
    Leys, Maarten
    ;
    Zhang, Liyang
    ;
    Derluyn, Joff
    ;
    Germain, Marianne
    Proceedings paper
    2009, 8th International Conference on Nitride Semiconductors - ICNS, 18/10/2009
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    Influence of growth parameters on Mg doping of GaN by molecular beam epitaxy

    Lieten, Ruben  
    ;
    Motsnyi, Vasyl  
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    Zhang, Liyang
    ;
    Cheng, Kai
    ;
    Leys, Maarten
    ;
    Degroote, Stefan
    Oral presentation
    2010, MRS Spring Meeting Symposium EE: Defects in Inorganic Photovoltaic Materials
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    Mg doping of GaN by molecular beam epitaxy

    Lieten, Ruben  
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    Motsnyi, Vasyl  
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    Zhang, Liyang
    ;
    Cheng, Kai
    ;
    Leys, Maarten
    ;
    Degroote, Stefan
    Journal article
    2011, Journal of Physics D: Applied Physics, (44) 13, p.135406
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    Photoluminescence studies of polarization effects in InGaN/(In)GaN multiple quantum well structures

    Zhang, Liyang
    ;
    Cheng, Kai
    ;
    Liang, Hu  
    ;
    Lieten, Ruben  
    ;
    Leys, Maarten
    ;
    Borghs, Gustaaf  
    Journal article
    2012, Japanese Journal of Applied Physics, (51) 3, p.30207
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    Strain effects in GaN Epi-layers grown on different substrates by metal organic vapor phase epitaxy

    Zhang, Liyang
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    Cheng, Kai
    ;
    Degroote, Stefan
    ;
    Leys, Maarten
    ;
    Germain, Marianne
    ;
    Borghs, Gustaaf  
    Journal article
    2010, Journal of Applied Physics, (108) 7, p.73522
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    Structural characterization of N-face GaN epilayers grown on Ge (111) by plasma assisted molecular beam epitaxy

    Zhang, Liyang
    ;
    Lieten, Ruben  
    ;
    Zhu, Tongtong
    ;
    Leys, Maarten
    ;
    Jiang, Sijia
    ;
    Borghs, Gustaaf  
    Journal article
    2013, CrystEngComm, 15, p.10590-10596
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    Study of InGaN quantum wells for light emitting diodes

    Zhang, Liyang
    PHD thesis
    2013-08
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    Two-color InGaN/GaN microfacet multiple-quantum well structures grown on Si substrate

    Zhang, Liyang
    ;
    Cheng, Kai
    ;
    Leys, Maarten
    ;
    Favia, Paola  
    ;
    Bender, Hugo  
    ;
    Borghs, Gustaaf  
    Journal article
    2011-10, Journal of Applied Physics, (110) 8, p.83518

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