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Browsing by Author "Zhang, W. D."

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    A single device based Voltage Step Stress (VSS) technique for fast reliability screening

    Ji, Z.
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    Zhang, J. F.
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    Zhang, W. D.
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    Zhang, X.
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    Kaczer, Ben  
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    De Gendt, Stefan  
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    Groeseneken, Guido  
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    Ren, P.
    Proceedings paper
    2014, International Reliability Physics Symposium - IRPS, 1/06/2014, p.GD.2
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    Development of a technique for characterizing bias temperature unstability-induced device-to-device variation at SRAM-relevant conditions

    Duan, M.
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    Zhang, J. F.
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    Ji, Z.
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    Zhang, W. D.
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    Kaczer, Ben  
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    Schram, Tom  
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    Ritzenthaler, Romain  
    Journal article
    2014, IEEE Transactions on Electron Devices, (61) 9, p.3081-3089
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    Energy distribution of positive charges in gate dielectric: probing technique and impacts of different defects

    Hatta, S. W. M.
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    Ji, J.
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    Zhang, J. F.
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    Duan, M.
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    Zhang, W. D.
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    Soin, N.
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    Kaczer, Ben  
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    De Gendt, Stefan  
    Journal article
    2013, IEEE Transactions on Electron Devices, (60) 5, p.1745-1753
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    Interface states beyond band gap and their impact on charge carrier mobility in MOSFETs

    Ji, Z.
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    Zhang, J. F.
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    Zhang, W. D.
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    Kaczer, Ben  
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    De Gendt, Stefan  
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    Groeseneken, Guido  
    Journal article
    2012, IEEE Transactions on Electron Devices, (59) 3, p.783-790
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    New insights into defect loss, slowdown, and device lifetime enhancement

    Duan, M.
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    Zhang, J. F.
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    Ji, Z.
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    Zhang, W. D.
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    Kaczer, Ben  
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    De Gendt, Stefan  
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    Groeseneken, Guido  
    Journal article
    2013, IEEE Transactions on Electron Devices, (60) 1, p.413-419
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    New insights into defect loss, slowdown, and device lifetime enhancement

    Duan, M.
    ;
    Zhang, J. F.
    ;
    Ji, Z.
    ;
    Zhang, W. D.
    ;
    Kaczer, Ben  
    ;
    De Gendt, Stefan  
    ;
    Groeseneken, Guido  
    Journal article
    2013, IEEE Transactions on Electron Devices, (60) 1, p.413-418

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