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Browsing by Author "Zhao, C."

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    Publication

    An investigation of field reduction effect on NBTI parameter characterization and lifetime prediction using a constant field stress method

    Zhou, L.
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    Bo, T.
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    Ji, Z.
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    Yang, H.
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    Xu, H.
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    Liu, Q.
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    Simoen, Eddy  
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    Wang, X.
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    Ma, X.
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    Li, Y.
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    Yin, H.
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    Du, A.
    Journal article
    2020, IEEE Transactions on Device and Materials Reliability, (20) 1, p.92-96
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    Generation of mobile hydrogenous ions in gate oxide and their potential applications

    Zhao, C.
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    Zhang, J.F.
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    Groeseneken, Guido  
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    Degraeve, Robin  
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    Ellis, J. N.
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    Beech, C. D.
    Journal article
    2001, Electronics Letters, (37) 11, p.716-717
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    Insights into the effect of TiN thickness scaling on DC and AC NBTI characteristics in replacement metal gate pMOSFETs

    Zhou, L.
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    Liu, Q.
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    Yang, H.
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    Ji, Z.
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    Xu, H.
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    Tang, B.
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    Simoen, Eddy  
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    Jiang, H.
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    Luo, Y.
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    Wang, X.
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    Ma, X.
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    Li, Y.
    Journal article
    2020, IEEE Transactions on Device and Materials Reliability, (20) 3, p.498-505
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    Reduction of NiGe/n- and p-Ge specific contact resistivity by enhanced dopant segregation in the presence of carbon during nickel germanidation

    Duan, N.
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    Luo, J.
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    Wang, G.
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    Liu, J.
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    Simoen, Eddy  
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    Mao, S.
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    Radamson, H.
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    Wang, X.
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    Li, J.
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    Wang, W.
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    Zhao, C.
    Journal article
    2016, IEEE Transactions on Electron Devices, (63) 11, p.4546-4549
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    Understanding frequency dependence of trap generation under AC negative bias temperature instability stress in Si p-FinFETs

    Zhou, L.
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    Zhang, Q.
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    Yang, H.
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    Ji, Z.
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    Zhang, Z.
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    Liu, Q.
    ;
    Xu, H.
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    Tang, B.
    ;
    Simoen, Eddy  
    ;
    Ma, X.
    ;
    Wang, X.
    Journal article
    2020, IEEE Electron Device Letters, (41) 7, p.965-968

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