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Browsing by Author "van Meer, Hans"

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    70 nm fully-depleted SOI cmos using a new fabrication scheme: the spacer/replacer scheme

    van Meer, Hans
    ;
    De Meyer, Kristin  
    Proceedings paper
    2002, Symposium on VLSI Technology: Digest of Technical Papers, 11/06/2002, p.170-171
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    A 2-D analytical threshold voltage model for fully-depleted SOI MOSFETs with halos or pockets

    van Meer, Hans
    ;
    De Meyer, Kristin  
    Journal article
    2001, IEEE Trans. Electron Devices, (48) 10, p.2292-2302
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    A 2D analytical threshold voltage model for fully depleted short channel SOI MOSFET, inculding HALO

    van Meer, Hans
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    De Meyer, Kristin  
    Proceedings paper
    2000, Proceedings of the Silicon on Insulator Development and Application Workshop; 6-7 September 2000., p.1.5
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    Analysis of halo implant influence on the self-heating and self-heating enhanced impact ionization on 0.13μm floating-body partially-depleted SOI MOSFET at low temperature

    Pavanello, M.A.
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    Martino, J.
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    Simoen, Eddy  
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    Mercha, Abdelkarim  
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    Claeys, Cor
    ;
    van Meer, Hans
    Proceedings paper
    2003, Silicon-on-Insulator Technology and Devices XI, 28/04/2003, p.389-394
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    Bias-dependent low-frequency noise model for low phase noise InP HEMT based MMIC oscillator design

    van Meer, Hans
    ;
    Schreurs, Dominique  
    ;
    van der Zanden, Koen
    ;
    De Raedt, Walter  
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    Simoen, Eddy  
    Proceedings paper
    1998, Simulation of Semiconductor Processes and Devices - SISPAD, 2/09/1998, p.157-160
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    Comparison between 0.13 μm partially depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K

    Pavanello, M.A.
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    Martino, J.
    ;
    Mercha, Abdelkarim  
    ;
    Rafi, Joan Marc
    ;
    Simoen, Eddy  
    ;
    Claeys, Cor
    Proceedings paper
    2002, Proceedings of the 17th International Symposium on Microelectronics Technology and Devices - SBMICRO, 9/09/2002, p.205-212
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    Comprehensive study of Ga Activation in Si, SiGe and Ge and 5 x 10-10 $Xcm2 contact resistivity achieved on Ga doped Ge using nanosecond laser activation

    Wang, Linlin
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    Yu, Hao  
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    Schaekers, Marc  
    ;
    Everaert, Jean-Luc
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    Franquet, Alexis  
    ;
    Douhard, Bastien  
    Proceedings paper
    2017, IEEE International Electron Devices Meeting - IEDM, 2/12/2017, p.550-552
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    Design, fabrication and charactisation of a 20 GHz low phase noise oscillator

    van Meer, Hans
    ;
    De Raedt, Walter  
    ;
    Kaufmann, L.M.F.
    Book
    1998-12
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    Effect of Schottky barrier alteration on the low-frequency noise of InP-based HEMT's

    van Meer, Hans
    ;
    Valenza, M.
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    van der Zanden, Koen
    ;
    De Raedt, Walter  
    ;
    Simoen, Eddy  
    Journal article
    1998, IEEE Electron Device Letters, (19) 10, p.370-372
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    Emerging device solutions for the post-classical CMOS era

    De Meyer, Kristin  
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    Collaert, Nadine  
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    Kubicek, Stefan  
    ;
    Kottantharayil, Anil
    ;
    van Meer, Hans
    Proceedings paper
    2003-04, ULSI Process Integration III, 27/04/2003, p.291-305
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    Empirical modeling of the low-frequency noise behaviour of InP-baseds HEMTs

    van Meer, Hans
    ;
    Simoen, Eddy  
    ;
    van der Zanden, Koen
    ;
    De Raedt, Walter  
    ;
    Valenza, M.
    ;
    Kaufman, L.
    Proceedings paper
    1998, Proceedings of the 28th European Solid-State Device Research Conference - ESSDERC'98, 8/09/1998, p.412-415
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    Fully-depleted SOI CMOS for the nanometer era

    van Meer, Hans
    PHD thesis
    2002
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    High performance raised gate/source/drain transistors for sub-0.15 μm CMOS technologies

    van Meer, Hans
    ;
    Kubicek, Stefan  
    ;
    Lyu, Jeong-ho
    ;
    Caymax, Matty  
    ;
    Loo, Roger  
    ;
    De Meyer, Kristin  
    Proceedings paper
    1999, ESSDERC'99 - Proceedings of the 29th European Solid-State Device Research Conference; 13-15 September 1999; Leuven, Belgium., p.388-391
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    IM3 suppression using a technology independent method based on vectorial large-signal measurements

    Schreurs, Dominique  
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    Visan, T.
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    Vandenberghe, S.
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    van Meer, Hans
    ;
    van der Zanden, Koen
    Proceedings paper
    1999, Proceedings 53rd Automatic RF Techniques Group Conference - ARFTG; 17-18 June 1999; Anaheim, CA, USA., p.82-88
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    Improved HEMT model for low phase-noise InP-based MMIC oscillator

    Schreurs, Dominique  
    ;
    van Meer, Hans
    ;
    van der Zanden, Koen
    ;
    De Raedt, Walter  
    ;
    Nauwelaers, Bart  
    Journal article
    1998, IEEE Trans. Microwave Theory and Techniques, (46) 10, p.1583-1585
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    Improved LOCOS isolation for ultra thin 0.18 μm fully-depleted SOI CMOS

    van Meer, Hans
    ;
    De Meyer, Kristin  
    Proceedings paper
    2001, Proceedings 10th International Symposium on Silicon-on-Insulator Technology and Devices; 26 March 2001; Washington, D.C., USA., p.301-306
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    Influence of device engineering on the analog and RF performances of SOI MOSFETs

    Kilchytska, V.
    ;
    Nève, A.
    ;
    Vancaillie, L.
    ;
    Levacq, D.
    ;
    Adriaensen, S.
    ;
    van Meer, Hans
    ;
    Raynaud, C.
    Journal article
    2003, IEEE Trans. Electron Devices, (50) 3, p.577-588
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    Influence of HALO implantation on analog performance and comparison between bulk, partially-depleted and fully-depleted MOSFET's

    Vancaillie, L.
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    Kilchytska, V.
    ;
    Levacq, D.
    ;
    Adriaensen, S.
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    van Meer, Hans
    ;
    De Meyer, Kristin  
    Proceedings paper
    2002, IEEE International SOI Conference, 7/10/2002, p.161-162
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    InP-based heterostructures for low-noise and power applications

    van der Zanden, Koen
    ;
    Behet, Markus
    ;
    De Raedt, Walter  
    ;
    van Meer, Hans
    ;
    Schreurs, Dominique  
    Oral presentation
    1997, 7th European Workshop on Heterostructure Technology (HETECH'97); 14-16 September 1997; Jülich, Germany.
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    Investigation of charge control related performances in double-gate SOI MOSFETs

    Kilchytska, V.
    ;
    Chung, T.M.
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    van Meer, Hans
    ;
    De Meyer, Kristin  
    ;
    Raskin, J.P.
    ;
    Flandre, D.
    Proceedings paper
    2003, Silicon-on-Insulator Technology and Devices XI, 28/04/2003, p.225-230
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