Browsing by author "Balestra, F."
Now showing items 1-4 of 4
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Influence of gamma-radiation on short channel SOI-MOSFETs with thin SiO2 films
Claeys, Cor; Simoen, Eddy; Litovchenko, V.G.; Evtukh, A.; Efremov, A.; Kizjak, A.; Rassamakin, J.; Balestra, F.; Nazarov, A.; Lysenko, V.S. (2002) -
Secondary impact ionization and device aging in deep submicron MOS devices with various transistor architectures
Marchand, B.; Cretu, B.; Ghibaudo, G.; Balestra, F.; Blachier, D.; Leroux, C.; Deleonibus, S.; Guegan, G.; Reimbold, G.; Kubicek, Stefan; De Meyer, Kristin (2002) -
Shrinking from 0.25 μm down to 0.12 μm SOI CMOS technology node: a contribution to 1/f noise in partially depleted n-MOSFETs
Dieudonné, F.; Haendler, S.; Jomaah, J.; Raynaud, C.; De Meyer, Kristin; van Meer, Hans; Balestra, F. (2002) -
Time-dependent degradation law for reliable lifetime prediction in sub-0.25μm bulk silicon N-MOSFETs
Szelag, B.; Kubicek, Stefan; De Meyer, Kristin; Balestra, F. (1999)