Browsing by author "Cullis, A.G."

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FEG-TEM analysis of the effects of Ge segregation and germane flux on the Ge profile across nm-scale SiGe layers, grown by both MBE and CVD

Benedetti, Alessandro; Norris, D.J.; Hetherington, C.J.D.; Cullis, A.G.; Robbins, D.J.; Wallis, D.J. (2003)
TEM analysis of Ge-on-Si MOSFET structures with HfO2 dielectric for high performance PMOS device technology

Norris, D.J.; Walther, T.; Cullis, A.G.; Myronov, M.; Dobbie, A.; Whall, T.; Parker, E.H.C.; Leadley, D.R.; De Jaeger, Brice; Lee, Willie; Meuris, Marc; Watling, J.; Asenov, A. (2010)
TEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology

Norris, D.J.; Ross, I.M.; Cullis, A.G.; Walther, T.; Myronov, M.; Dobbie, A.; Whall, T.; Parker, E.H.C.; Leadley, D.R.; De Jaeger, Brice; Lee, Willie; Meuris, Marc (2010)