Browsing by author "Peaker, A.R."
Now showing items 1-5 of 5
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Germanium CMOS... Implantation, doping and defects
Peaker, A.R.; Markevich, V.P.; Satta, Alessandra; Simoen, Eddy (2009) -
Hydrogen induced positive charge in Hf-based dielectrics
Zhao, C.Z.; Zhang, J.F.; Zahid, Mohammed; Efthymiou, E.; Lu, Y.; Hall, S.; Peaker, A.R.; Groeseneken, Guido; Pantisano, Luigi; Degraeve, Robin; De Gendt, Stefan; Heyns, Marc (2007) -
Impact of different defects on the kinetics of Negative Bias Temperature Instability of Hafnium stacks
Zhang, J.F.; Zhao, C.Z.; Chang, M.H.; Zahid, Mohammed; Peaker, A.R.; Hall, S; Groeseneken, Guido; Pantisano, Luigi; De Gendt, Stefan; Heyns, Marc (2008) -
Process-induced positive charges in Hf-based gate stacks
Zhao, C.Z.; Zhang, J.F.; Chang, M.H.; Peaker, A.R.; Hall, S.; Groeseneken, Guido; Pantisano, Luigi; De Gendt, Stefan; Heyns, Marc (2008) -
Vacancy clusters in germanium
Peaker, A.R.; Markevich, V.P.; Slotte, J.; Kuitunen, K.; Tuomisto, F.; Satta, Alessandra; Simoen, Eddy; Capan, I.; Pivac, B.; Jacimovic, R. (2008)