Browsing by author "Farvacque, J. L."
Now showing items 1-9 of 9
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2DEG mobility in AlGaN-GaN structures grown by LP-MOVPE
Bougrioua, Zahia; Farvacque, J. L.; Moerman, Ingrid; Carosella, F. (2001) -
Electrical characteristics of n-type GaN grown by LP-MOVPE
Bougrioua, Zahia; Farvacque, J. L.; Moerman, Ingrid; Thrush, E. J. (1999) -
Free-carrier mobility in GaN in the pPresence of dislocation walls
Farvacque, J. L.; Bougrioua, Zahia; Moerman, Ingrid (2001) -
Material optimisation for AlGaN/GaN HFET applications
Bougrioua, Zahia; Moerman, Ingrid; Sharma, N.; Wallis, R. H.; Cheyns, Jan; Jacobs, Koen; Thrush, E. J.; Considine, L.; Beanland, R.; Farvacque, J. L.; Humphreys, C. (2001) -
Mobilité dans GaN en présence de parois de dislocations
Farvacque, J. L.; Bougrioua, Zahia; Moerman, Ingrid (2001) -
Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE
Bougrioua, Zahia; Farvacque, J. L.; Moerman, Ingrid; Demeester, Piet; Harris, J. J.; Lee, K.; Van Tendeloo, G.; Lebedev, O.; Thrush, E. J. (1999) -
Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE
Farvacque, J. L.; Bougrioua, Zahia; Moerman, Ingrid; Van Tendeloo, G.; Lebedev, O. (1999) -
Theoretical analysis of electrical transport in undoped and Si doped GaN grown by LP-MOVPE
Bougrioua, Zahia; Farvacque, J. L.; Moerman, Ingrid; Demeester, Piet; Harris, J. J.; Lee, K.; Van Tendeloo, G.; Lebedev, O.; Thrush, E. J. (1999) -
Theoretical simulation of free carrier mobility collapse in GaN in terms of dislocation walls
Farvacque, J. L.; Bougrioua, Zahia; Moerman, Ingrid (2000)