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Theoretical analysis of electrical transport in undoped and Si doped GaN grown by LP-MOVPE
Publication:
Theoretical analysis of electrical transport in undoped and Si doped GaN grown by LP-MOVPE
Date
1999
Meeting abstract
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3222.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Bougrioua, Zahia
;
Farvacque, J. L.
;
Moerman, Ingrid
;
Demeester, Piet
;
Harris, J. J.
;
Lee, K.
;
Van Tendeloo, G.
;
Lebedev, O.
;
Thrush, E. J.
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Abstract
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1887
since deposited on 2021-10-06
Acq. date: 2025-10-23
Citations
Metrics
Views
1887
since deposited on 2021-10-06
Acq. date: 2025-10-23
Citations