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Theoretical analysis of electrical transport in undoped and Si doped GaN grown by LP-MOVPE

Date

1999
Meeting abstract
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dc.contributor.authorBougrioua, Zahia
dc.contributor.authorFarvacque, J. L.
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorDemeester, Piet
dc.contributor.authorHarris, J. J.
dc.contributor.authorLee, K.
dc.contributor.authorVan Tendeloo, G.
dc.contributor.authorLebedev, O.
dc.contributor.authorThrush, E. J.
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorDemeester, Piet
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.date.accessioned2021-10-06T10:44:42Z
dc.date.available2021-10-06T10:44:42Z
dc.date.embargo9999-12-31
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3260
dc.source.beginpage124
dc.source.conference3rd International Conference on Nitride Semiconductors - ICNS3
dc.source.conferencedate04/07/1999
dc.source.conferencelocationMontpellier France
dc.title

Theoretical analysis of electrical transport in undoped and Si doped GaN grown by LP-MOVPE

dc.typeMeeting abstract
dspace.entity.typePublication
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