Browsing by author "Van Tendeloo, G."
Now showing items 1-20 of 51
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A microstructural study of the thermal stability of atomic layer deposited Al2O3 thin films
Nistor, L.; Richard, Olivier; Zhao, Chao; Bender, Hugo; Stesmans, Andre; Van Tendeloo, G. (2003-04) -
A new diamond nucleation mechanism based on carbon transport through nanodiamond / TiO2 sol-gel composites
Haenen, Ken; Daenen, M.; Hardy, An; Van Bael, Marlies; Nesladek, Milos; Zhang, L.; Van Tendeloo, G. (2009) -
A potential method to correlate electrical properties and microstructure of a unique high-Tc superconducting Josephson junction
Verbist, K.; Lebedev, O. I.; Van Tendeloo, G.; Tafuri, F.; Miletto Granozio, F.; Di Chiara, A.; Bender, Hugo (1999) -
Analysis of the local boron environment in boron-doped nanodiamond films from chemical vapor deposition
Turner, S.; Lu, Y.G.; Janssens, S.D.; Da Pieve, F.; Lamoen, D.; Verbeeck, J.; Haenen, Ken; Wagner, Patrick; Van Tendeloo, G. (2012) -
Characterization of B-doped ultra-nanocrystalline diamond films grown by plasma enhanced CVD under a continuous DC bias
Janssen, W.; Ruttens, B.; Degutis, G.; Lu, Y.G.; Turner, S.; Verbeeck, J.; Van Tendeloo, G.; Van Bael, Marlies; Hardy, An; Haenen, Ken (2012) -
Characterization of diamond films grown under continuous DC bias by MW-PECVD – Evidence of ultra-nano-crystalline diamond film growth
Mortet, Vincent; Zhang, L.; D'Haen, Jan; Soltani, A.; Douhéret, O.; Troadec, D.; Van Tendeloo, G.; Wagner, Patrick; Haenen, Ken (2009) -
Characterization of phosphorus doped (110) homoepitaxial diamond films
Balasubramaniam, Yaso; Janssens, Stoffel; Sakr, G.; Jomard, F.; Barjon, J.; Lu, Y.-G.; Turner, S.; Verbeeck, J.; Van Tendeloo, G.; Soltani, A.; D'Haen, Jan; Nesladek, Milos; Haenen, Ken (2013) -
Comparative Hall studies in the electron - and hole-doped manganites La0.33Ca0.67MnO3 and La0.70Ca0.30MnO3
Gordon, Ivan; Wagner, Patrick; Das, Arabinda; Vanacken, J.; Moshchalkov, V. V.; Bruynseraede, Y.; Schuddinck, W.; Van Tendeloo, G.; Ziese, M.; Borghs, Gustaaf (2000) -
Comparison of nucleation and growth at Cr/diamond and CrOx/diamond interfaces
Degutis, Giedrius; Pobedinskas, Paulius; Lu, Y.; Turner, S.; Verbeeck, J.; D'Haen, Jan; Hardy, An; Haenen, Ken; Van Tendeloo, G.; Van Bael, Marlies (2013) -
Control of the grain size and sp2/sp3 ratio in nanocrystalline diamond films using continuous DC bias
Mortet, Vincent; Zhang, L.; D'Haen, Jan; Soltani, A.; Douhéret, O.; Troadec, D.; Van Tendeloo, G.; Wagner, Patrick; Haenen, Ken (2009) -
CVD diamond nucleation and the role of Ti/TiO2 studied by electron microscopy and spectroscopy
Lu, Y.; Verbeeck, G.; Van Tendeloo, G.; De Dobbelaere, C.; Degutis, G.; Hardy, An; Van Bael, Marlies; Janssens, Stoffel D.; Wagner, Patrick; Haenen, Ken (2011) -
Diamond nucleation by carbon transport from buried nanodiamond TiO2 sol-gel composites
Daenen, M.; Zhang, L.; Erni, R.; Williams, Oliver; Hardy, An; Van Bael, Marlies; Wagner, Patrick; Haenen, Ken; Nesladek, Milos; Van Tendeloo, G. (2009) -
Direct experimental observation of local bond length variations in CVD grown B:NCD films by spatially resolved EELS
Lu, Y.-G.; Turner, S.; Verbeeck, J.; Janssens, Stoffel; Wagner, Patrick; Haenen, Ken; Van Tendeloo, G. (2013) -
Effect of deposition parameters on A1:ZnO transparant conductive oxide thin films prepared by DC sputtering
Atalay, Ahmed; Van Gompel, Mathias; D'Haen, Jan; Turner, Stuart; Van Tendeloo, G.; Haenen, Ken; Wagner, Patrick (2014) -
Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures
Jacobs, K.; Van Daele, B.; Leys, Maarten; Moerman, Ingrid; Van Tendeloo, G. (2003) -
Formation of metallic In in InGaN/GaN multiquantum wells
Van Daele, B.; Van Tendeloo, G.; Jacobs, Koen; Moerman, Ingrid; Leys, Maarten (2004) -
Grain size tuning of nanocrystalline chemical vapor deposited diamond by continuous electrical bias growth: Experimental and theoretical study
Mortet, V.; Zhang, L.; Eckert, M.; D'Haen, Jan; Soltani, A.; Moreau, M.; Troadec, D.; Neyts, E.; de Jaeger, J.C.; Verbeeck, J.; Bogaerts, A.; Van Tendeloo, G.; Haenen, Ken; Wagner, Patrick (2012) -
Growth and characteristics of n-type phosphorus doping on (110) oriented diamond - With influence of substrate miscut angle
Balsubramniam, Yaso; Janssens, Stoffel; Dexters, Wim; Robaeys, Pieter; Sakr, G.; Jomard, F.; Barjon, J.; Lu, Y.-G.; Turner, S.; Verbeeck, J.; Van Tendeloo, G.; Soltani, A.; D'Haen, Jan; Nesladek, Milos; Haenen, Ken (2014) -
High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AlN interlayers
Germain, Marianne; Leys, Maarten; Boeykens, Steven; Degroote, Stefan; Wang, Wenfei; Schreurs, Dominique; Ruythooren, Wouter; Choi, Kang-Hoon; Van Daele, B.; Van Tendeloo, G.; Borghs, Gustaaf (2004-12) -
Imaging of H2 bubbles and the related strain field in silicon wafers exposed to RF hydrogen plasma
Ghica, C.; Nistor, L.; Richard, Olivier; Bender, Hugo; Ulyashin, Aliaksandr; Van Tendeloo, G. (2004)