Browsing by author "Fanciulli, M."
Now showing items 1-7 of 7
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Active trap determination at the interface of Ge and In0.53Ga0.47As substrates with dielectric layers
Molle, A.; Baldovino, S.; Lamagna, L.; Spiga, S.; Lamperti, A.; Fanciulli, M.; Tsoutsou, D.; Golias, E.; dimoulas, A.; Brammertz, Guy; Merckling, Clement; Caymax, Matty (2011) -
Control of filament size and reduction of reset current below 10μA in NiO resistance switching memories
Nardi, F.; Ielmini, D.; Cagli, C.; Spiga, S.; Fanciulli, M.; Goux, Ludovic; Wouters, Dirk (2011) -
Ge-based interface passivation for atomic layer deposited La-doped ZrO2
Molle, A.; Brammertz, Guy; Lamagna, L.; Fanciulli, M.; Meuris, Marc; Spiga, S. (2009) -
Ge-based passivation for high permittivity oxide deposition on III-V compounds substrates
Molle, A.; Spiga, S.; Lamagna, L.; Fanciulli, M.; Brammertz, Guy; Meuris, Marc (2009) -
Integrated functional oxides in non-volatile memory devices
Muller, Christophe; Courtade, Lorene; Turquat, Ch.; Menou, Nicolas; Lisoni, Judit; Goux, Ludovic; Wouters, Dirk; Lamperti, A.; Spiga, Sabina; Fanciulli, M.; Goguenheim, D. (2008) -
Interface engineering for Ge metal-oxide-semiconductor devices
dimoulas, A.; Brunco, David; Ferrari, S.; Seo, J.W.; Panayiotatos, Y.; Sotiropoulos, A.; Conard, Thierry; Caymax, Matty; Spiga, S.; Fanciulli, M.; Dieker, C.; Evangelou, E. K.; Galata, S.; Houssa, Michel; Heyns, Marc (2007) -
X-ray and ToF-SIMS comparison of resistive switching NiO films obtained from controlled Ni thermal oxidation, e-beam and ALD
Lamperti, A.; Courtade, Lorene; Lisoni, Judit; Goux, Ludovic; Turquat, C.; Spiga, Sabina; Muller, Christophe; Wouters, Dirk; Fanciulli, M. (2008)