Browsing by author "Lee, Seung Hun"
Now showing items 1-3 of 3
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15nm-WFIN high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process
Mitard, Jerome; Witters, Liesbeth; Loo, Roger; Lee, Seung Hun; Sun, J.W.; Franco, Jacopo; Ragnarsson, Lars-Ake; Brand, A.; Lu, X.; Yoshido, N.; Eneman, Geert; Brunco, David; Vorderwestner, M.; Storck, P.; Milenin, Alexey; Hikavyy, Andriy; Waldron, Niamh; Favia, Paola; Vanhaeren, Danielle; Vanderheyden, Annelies; Richard, Olivier; Mertens, Hans; Arimura, Hiroaki; Sioncke, Sonja; Vrancken, Christa; Bender, Hugo; Eyben, Pierre; Barla, Kathy; Lee, Sun Ghil; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron (2014) -
Strained germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement fin process
Witters, Liesbeth; Mitard, Jerome; Loo, Roger; Eneman, Geert; Mertens, Hans; Brunco, David; Lee, Seung Hun; Waldron, Niamh; Hikavyy, Andriy; Favia, Paola; Milenin, Alexey; Shimura, Yosuke; Vrancken, Christa; Bender, Hugo; Horiguchi, Naoto; Barla, Kathy; Thean, Aaron; Collaert, Nadine (2013-12) -
Stress simulations for optimal mobility group IV p- and nMOS FinFETs for the 14 nm node and beyond
Eneman, Geert; Brunco, David; Witters, Liesbeth; Vincent, Benjamin; Favia, Paola; Hikavyy, Andriy; De Keersgieter, An; Mitard, Jerome; Loo, Roger; Veloso, Anabela; Richard, Olivier; Bender, Hugo; Lee, Seung Hun; Van Dal, Mark; Kabir, Nafees; Vandervorst, Wilfried; Caymax, Matty; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron (2012)