Publication:
Strained germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement fin process
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1838 since deposited on 2021-10-21
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Acq. date: 2026-10-09
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Views
1838 since deposited on 2021-10-21
2last month
1last week
Acq. date: 2026-10-09
Citations