Publication:
Strained germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement fin process
Date
Loading...
Journal
Abstract
Description
Statistics
Views
1832 since deposited on 2021-10-21
1last month
Acq. date: 2026-02-24
Citations
Statistics
Views
1832 since deposited on 2021-10-21
1last month
Acq. date: 2026-02-24
Citations