Publication:
Strained germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement fin process
Date
Loading...
Journal
Abstract
Description
Metrics
Views
1829 since deposited on 2021-10-21
Acq. date: 2025-10-23
Citations
Metrics
Views
1829 since deposited on 2021-10-21
Acq. date: 2025-10-23
Citations