Browsing by author "Weemaes, R."
Now showing items 1-3 of 3
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Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices
Pelaz, L.; Duffy, Ray; Aboy, M.; Marques, L.; Lopez, P.; Santos, I.; Pawlak, Bartek; Van Dal, Mark; Duriez, Blandine; Merelle, Thomas; Doornbos, Gerben; Collaert, Nadine; Witters, Liesbeth; Rooyackers, Rita; Vandervorst, Wilfried; Jurczak, Gosia; Kaiser, M.; Weemaes, R.; Van Berkum, J.; Breimer, P.; Lander, Rob (2008) -
Minimization of the MuGFET contact resistance by integration of NiSi contacts on epitaxially raised source/drain regions
Dixit, Abhisek; Rooyackers, Rita; Leys, Frederik; Kaiser, Monja; Weemaes, R.; Ferain, Isabelle; De Keersgieter, An; Collaert, Nadine; Surdeanu, Radu; Goodwin, Michael; Zimmerman, Paul; Loo, Roger; Caymax, Matty; Jurczak, Gosia; Biesemans, Serge; De Meyer, Kristin (2005) -
Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering
Ferain, Isabella; Duffy, Ray; Collaert, Nadine; Van Dal, Mark; Pawlak, Bartek; O'Sullivan, Barry; Witters, Liesbeth; Rooyackers, Rita; Conard, Thierry; Popovici, Mihaela Ioana; Van Elshocht, Sven; Kaiser, M.; Weemaes, R.; Swerts, Johan; Jurczak, Gosia; Lander, Rob; De Meyer, Kristin (2009)