Browsing by author "Lenk, S."
Now showing items 1-4 of 4
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Asymmetric strain relaxation in patterned SiGe layer: a means to enhance carrier mobilities in Si cap layers
Buca, D.; Hollander, B.; Feste, S.; Lenk, S.; Trinkaus, H.; Mantl, S.; Loo, Roger; Caymax, Matty (2007-01) -
Formation of ternary Ni-silicide on relaxed and strained SiGe layers
Zhao, Q.T.; Buca, D.; Lenk, S.; Loo, Roger; Caymax, Matty; Mantl, S. (2004) -
Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures by Si+ ion implantation
Holländer, B.; Buca, D.M.; Lenk, S.; Mantl, S.; Herzog, H.J.; Hackbarth, T.; Loo, Roger; Caymax, Matty; Mörschbächer, M.; Fichtner, P.F.P. (2004) -
Thin strain relaxed SiGe buffer layers on Si and SOI wafers made by He+ ion implantation and annealing
Mantl, S.; Holländer, B.; Hüging, N.; Luysberg, M.; Lenk, S.; Hogg, S.M.; Herzog, H.J.; Hackbarth, T.; Loo, Roger; Bauer, R. (2003)