Browsing by author "Bougrioua, Z."

AlGaN/GaN based MOSHFETs with different gate dielectrics and treatments

Mistele, D.; Rotter, T.; Bougrioua, Z.; Moerman, Ingrid; Röver, K.S.; Seyboth, M.; Schwegler, V.; Stemmer, J.; Fedler, F.; Klausing, H.; Semchinova, O.K.; Aderhold, J.; Graul, J. (2002)

AlGaN/GaN HEMTS: material, processing and characterization

Calle, F.; Palacios, T.; Monroy, E.; Grajal, J.; Verdu, M.; Bougrioua, Z.; Moerman, Ingrid (2003)

Characterisation of GaN buffers with AIN interlayers used as semi-insulating templates for HEMT strutures

Bougrioua, Z.; Leroux, M.; Moerman, Ingrid (2002)

Detailed interpretation of electron transport in n-GaN

Mavroidis, C.; Harris, J.J.; Kappers, M.J.; Humphreys, C.J.; Bougrioua, Z. (2003)

Engineering of an insulating buffer and use of AIN interlayers: two optimisations for AlGaN-GaN HEMT-like structures

Bougrioua, Z.; Moerman, Ingrid; Nistor, L.; Monroy, E.; Calle, F. (2002)

Engineering of an insulating buffer and use of AIN interlayers: two optimisations for AlGaN-GaN HEMT-like structures

Bougrioua, Z.; Moerman, Ingrid; Nistor, L.; Van Daele, B.; Monroy, E.; Palacios, T.; Calle, F.; Leroux, M. (2003)

Evidence of an impurity band at an n-GaN/sapphire interface

Mavroidis, C.; Harris, J.J.; Jackman, R.B.; Bougrioua, Z.; Moerman, Ingrid (2003)

Evolution de caractéristiques statiques de HEMTs AlGaN/GaN soumis à un stress électrique réalisé à differentes températures

Boudart, B.; Llibre, J.F.; Briand, D.; Tala-Ighil, B.; Toutah, H.; Guhel, Y.; de Jaeger, J.C.; Bougrioua, Z.; Germain, Marianne; Moerman, Ingrid (2003)

Fabrication and performance of AlGaN/GaN HEMTS

Calle, F.; Palacios, T.; Monroy, E.; Grajal, J.; Tirado, J.M.; Jiménez, A.; Ranchal, R.; Munoz, E.; Verdu, M.; Sanchez, F.J.; Montojo, M.T.; Bougrioua, Z.; Moerman, Ingrid (2002)

First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology

Werquin, M.; Vellas, N.; Guhel, Y.; Ducatteau, D.; Boudart, B.; Pesant, J.C.; Bougrioua, Z.; Germain, Marianne; de Jaeger, J.C.; Gaquiere, C. (2005)

Free carrier mobility in AlGaN/GaN quantum wells

Farvacque, J.L.; Bougrioua, Z.; Carosella, F.; Moerman, Ingrid (2002)

High power performances of AlGaN/GaN HEMTs on Sapphire Substrate at Ft=4GHz

Vellas, N.; Gaquire, C.; Guhel, Y.; Werquin, M.; Ducatteau, D.; Boudart, B.; de Jaeger, J.C.; Bougrioua, Z.; Germain, Marianne; Leys, Maarten; Moerman, Ingrid; Borghs, Gustaaf (2002)

Impact of plasma pre-treatment before SiNx passivation on AlGaN/GaN HFETs electrical traps

Guhel, Y.; Boudart, B.; Vellas, N.; Gaquiere, C.; Delos, E.; Ducatteau, D.; Bougrioua, Z.; Germain, Marianne (2005)

Improved AlGaN/GaN high mobility transistor using AIN interlayers

Jiménez, A.; Bougrioua, Z.; Tirado, J.M.; Braña de Cal, Alejandro F.; Calleja, E.; Muñoz, E.; Moerman, Ingrid (2003)

Improved HEMT devices from AlGaN/GaN heterojunctions using AIN interlayers

Jiménez, A.; Tirado, J.M.; Bougrioua, Z.; Braña de Cal, Alejandro F.; Grajal, J.; Cubilla, P.; Muñoz, E.; Calleja, E.; Verdu, M.; Montojo, M.T.; Moerman, Ingrid (2003)

Influence d'une passivation précédée d'un traitement de surface sur le comportement électrique en regime statique d'un HEMT AlGaN/GaN

Guhel, Y.; Boudart, B.; Vellas, N.; Gaquiere, C.; Delos, E.; Ducateau, D.; Bougrioua, Z.; Germain, Marianne; de Jaeger, J.C. (2003)