Browsing by author "Liang, C."

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Total ionizing dose effects on strained Ge pMOS FinFETS on bulk Si

Zhang, E. Z; Fleetwood, D. M.; Hatchel, J. A.; Liang, C.; Reed, R.; Alles, M. L.; Schrimpf, R. D.; Linten, Dimitri; Mitard, Jerome; Chisholm, M. F.; Pantelides, S. T. (2017)
Total-ionizing-dose effects and low-frequency noise in 30-nm gate-length Bulk and SOI FinFETs with SiO2/HfO2 gate delectrics

Gorchichko, M.; Cao, Y.; Zhang, E.X.; Yan, D.; Gong, H.; Zhao, S.E.; Wang, P.; Jiang, R.; Liang, C.; Fleedwood, D.M.; Schrimpf, R.D.; Reed, R.A.; Linten, Dimitri (2020)