Browsing by author "Nakashima, T."
Now showing items 1-4 of 4
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Carrier lifetime evaluation of electron irradiated SiGe/Si diode
Idemoto, T.; Ohyama, H.; Takakura, K.; Tsunoda, I.; Yoneoka, M.; Nakashima, T.; Bargallo Gonzalez, Mireia; Simoen, Eddy; Claeys, Cor (2010) -
Investigation of the Si doping effect in b-Ga2O3 films by co-sputtering of gallium oxide and Si
Takakura, K.; Funasaki, S.; Tsunoda, I.; Ohyama, H.; Takeuchi, D.; Nakashima, T.; Shibuya, M.; Murakami, K.; Simoen, Eddy; Claeys, Cor (2012) -
Radiation damage of Si1-xGex S/D p-MOSFETs with different Ge concentrations
Nakashima, T.; Idemoto, T.; Tsunoda, I.; Takakura, K.; Yoneoka, M.; Ohyama, H.; Yoshino, K.; Bargallo Gonzalez, Mireia; Simoen, Eddy; Claeys, Cor (2012) -
Radiation damages of SiGe devices by electron irradiation and their thermally recovery bahavior
Nakashima, T.; Idemoto, T.; Takakura, K.; Tsunoda, I.; Yoneoka, M.; Ohyama, H.; Yoshino, K.; Bargallo Gonzalez, Mireia; Simoen, Eddy; Eneman, Geert; Claeys, Cor (2010)