Browsing by author "Vystavel, Tomas"
Now showing items 1-8 of 8
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Application of electron channeling contrast imaging to 3D semiconductor structures through proper detector configurations
Han, Han; Hantschel, Thomas; Strakos, Libor; Vystavel, Tomas; Baryshnikova, Marina; Mols, Yves; Kunert, Bernardette; Langer, Robert; Vandervorst, Wilfried; Caymax, Matty (2020) -
Ascertaining the nature and distribution of extended crystalline defects in emerging semiconductor materials using electron channeling constrast imaging
Schulze, Andreas; Han, Han; Strakos, Libor; Vystavel, Tomas; Porret, Clément; Loo, Roger; Caymax, Matty (2018) -
Crystalline defect analysis in epitaxial Si0.7Ge0.3 layer using site-specific ECCI-STEM
Han, Han; Strakos, Libor; Hantschel, Thomas; Vystavel, Tomas; Porret, Clément; Loo, Roger; Caymax, Matty (2021) -
Electron channeling contrast imaging: potential for future metrology in semiconductor industry
Vystavel, Tomas; Prokhodtseva, Anna; Schulze, Andreas; Caymax, Matty (2016) -
Enhancing the defect contrast in ECCI through angular filtering of BSEs
Han, Han; Hantschel, Thomas; Schulze, Andreas; Strakos, Libor; Vystavel, Tomas; Loo, Roger; Kunert, Bernardette; Langer, Robert; Vandervorst, Wilfried; Caymax, Matty (2020) -
Non-destructive characterization of extended crystalline defects in confined semiconductor device structures
Schulze, Andreas; Strakos, Libor; Vystavel, Tomas; Loo, Roger; Pacco, Antoine; Collaert, Nadine; Vandervorst, Wilfried; Caymax, Matty (2018) -
Seeing the invisible: metrology for extended crystalline defects in beyond silicon semiconductors
Schulze, Andreas; Prokhodtseva, Anna; Vystavel, Tomas; Gachet, David; Berney, Jean; Loo, Roger; Vandervorst, Wilfried; Caymax, Matty (2016) -
Seeing the invisible: metrology for extended defects in beyond-silicon semiconductor device structures
Schulze, Andreas; Prokhodtseva, Anna; Vystavel, Tomas; Gachet, David; Berney, Jean; Loo, Roger; Vandervorst, Wilfried; Caymax, Matty (2017)