Browsing by author "Esseni, D."
Now showing items 1-4 of 4
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Design of ultra-wideband low-noise amplifiers in 45nm CMOS technology: comparison between planar bulk and SOI FinFET devices
Ponton, Davide; Palestri, P.; Esseni, D.; Selmi, L.; Tiebout, M.; Parvais, Bertrand; Siprak, D.; Knoblinger, G. (2009) -
Design of UWB LNA in 45nm CMOS technology: Planar vs. FinFET
Ponton, Davide; Palestri, P; Esseni, D.; Selmi, L.; Tiebout, M.; Parvais, Bertrand; Knoblinger, G. (2008-05) -
Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs
Serra, N.; Conzatti, F.; Esseni, D.; De Michielis, M.; Palestri, P.; Selmi, L.; Thomas, S.; Whall, T. E.; Parker, E. H. C.; Leadley, D. R.; Witters, Liesbeth; Hikavyy, Andriy; Hytch, M. J.; Houdellier, F.; Snoeck, E.; Wang, T. J.; Lee, W. C.; Vellianitis, Georgios; Van Dal, Mark; Duriez, Blandine; Doornbos, Gerben; Lander, Rob (2009) -
Fabrication, characterization and modeling of strained SOI MOSFETs with very large effective mobility
Driussi, F.; Esseni, D.; Selmi, L.; Schmidt, M.; Lemme, M.; Kurz, H.; Buca, D.; Mantl, S.; Luysberg, M.; Loo, Roger; Nguyen, Duy; Reiche, M. (2007)