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Design of ultra-wideband low-noise amplifiers in 45nm CMOS technology: comparison between planar bulk and SOI FinFET devices
Publication:
Design of ultra-wideband low-noise amplifiers in 45nm CMOS technology: comparison between planar bulk and SOI FinFET devices
Date
2009
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Ponton, Davide
;
Palestri, P.
;
Esseni, D.
;
Selmi, L.
;
Tiebout, M.
;
Parvais, Bertrand
;
Siprak, D.
;
Knoblinger, G.
Journal
IEEE Transactions on Circuits and Systems I: Regular Papers
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1882
since deposited on 2021-10-18
Acq. date: 2025-10-23
Citations
Metrics
Views
1882
since deposited on 2021-10-18
Acq. date: 2025-10-23
Citations