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Design of ultra-wideband low-noise amplifiers in 45nm CMOS technology: comparison between planar bulk and SOI FinFET devices

Date

2009
Journal article
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dc.contributor.authorPonton, Davide
dc.contributor.authorPalestri, P.
dc.contributor.authorEsseni, D.
dc.contributor.authorSelmi, L.
dc.contributor.authorTiebout, M.
dc.contributor.authorParvais, Bertrand
dc.contributor.authorSiprak, D.
dc.contributor.authorKnoblinger, G.
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.date.accessioned2021-10-18T01:49:19Z
dc.date.available2021-10-18T01:49:19Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16037
dc.source.beginpage920
dc.source.endpage932
dc.source.issue5
dc.source.journalIEEE Transactions on Circuits and Systems I: Regular Papers
dc.source.volume56
dc.title

Design of ultra-wideband low-noise amplifiers in 45nm CMOS technology: comparison between planar bulk and SOI FinFET devices

dc.typeJournal article
dspace.entity.typePublication
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