Browsing by author "Hendriks, Marton"
Now showing items 1-8 of 8
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A high performance of 0.18μm CMOS technology designed for manufacturability
Badenes, Gonçal; Hendriks, Marton; Perello, Carles; Deferm, Ludo (1997) -
A new HF vapor native oxide removal process for cluster applications
Sprey, Hessel; Storm, Arjen; Maes, Jan; Granneman, E. H. A.; Hendriks, Marton; Röhr, Erika; Caymax, Matty; Decoutere, Stefaan; Heyns, Marc (1998) -
Accurate determination of channel length, series resistance and junction doping profile for MOSFET optimisation in deep submicron technologies
Biesemans, Serge; Hendriks, Marton; Kubicek, Stefan; De Meyer, Kristin (1996) -
Accurate modeling of double barrier resonant tunneling diodes
van de Roer, T.; Hendriks, Marton; Magnus, Wim; Henini, M.; Heyker, H.; Kwaspen, M.; van der Vleuten, W.; Caro, J.; Lukey, P. (1995) -
Accurate modelling of the accumulation region of a double barrier resonant tunnelling diode
Hendriks, Marton; Magnus, Wim; van de Roer, T. G. (1996) -
Halo doping for good performance and reliability in 0.25μm CMOS technology
Hendriks, Marton; Badenes, Gonçal; Deferm, Ludo (1996) -
Modelling of the accumulation region of a double-barrier resonant tunneling diode
Hendriks, Marton; Magnus, Wim; van de Roer, T. G. (1994) -
Practical accuracy analysis of some existing effective channel length and series resistance extraction methods for MOSFET's
Biesemans, Serge; Hendriks, Marton; Kubicek, Stefan; De Meyer, Kristin (1998)