Browsing by author "Van Daele, B."
Now showing items 1-9 of 9
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Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures
Jacobs, K.; Van Daele, B.; Leys, Maarten; Moerman, Ingrid; Van Tendeloo, G. (2003) -
Engineering of an insulating buffer and use of AIN interlayers: two optimisations for AlGaN-GaN HEMT-like structures
Bougrioua, Z.; Moerman, Ingrid; Nistor, L.; Van Daele, B.; Monroy, E.; Palacios, T.; Calle, F.; Leroux, M. (2003) -
Formation of metallic In in InGaN/GaN multiquantum wells
Van Daele, B.; Van Tendeloo, G.; Jacobs, Koen; Moerman, Ingrid; Leys, Maarten (2004) -
High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AlN interlayers
Germain, Marianne; Leys, Maarten; Boeykens, Steven; Degroote, Stefan; Wang, Wenfei; Schreurs, Dominique; Ruythooren, Wouter; Choi, Kang-Hoon; Van Daele, B.; Van Tendeloo, G.; Borghs, Gustaaf (2004-12) -
Relation between microstructure and 2DEG properties in AlGaN/GaN structures
Van Daele, B.; Van Tendeloo, G.; Germain, Marianne; Leys, Maarten; Bougrioua, Z.; Moerman, Ingrid (2002) -
Relation between microstructure and 2DEG properties of AlGaN/GaN structures
Van Daele, B.; Van Tendeloo, G.; Germain, Marianne; Leys, Maarten; Bougrioua, Z.; Moerman, Ingrid (2002) -
Ripple morphologies on ion irradiated Si Ge
Sarkar, Subhendu; Van Daele, B.; Vandervorst, Wilfried (2007) -
Study of dopant diffusion and defect evolution for advanced ultra shallow junctions based on atomistic kinetic monte carlo approach
Noda, T.; Vandervorst, Wilfried; Felch, S.; Parihar, V.; Vrancken, Christa; Severi, Simone; Hoffmann, Thomas Y.; Falepin, A.; Janssens, Tom; Bender, Hugo; Van Daele, B.; Eyben, Pierre; Niwa, M.; Schreutelkamp, R.; Nouri, F.; Absil, Philippe; Jurczak, Gosia; De Meyer, Kristin; Biesemans, Serge (2007) -
Transmission electron microscopy characterisation of Ti and Al/Ti contacts on GaN and AlGaN/GaN
Van Daele, B.; Van Tendeloo, G.; Ruythooren, Wouter; Derluyn, Joff; Leys, Maarten; Germain, Marianne (2005)