Browsing by author "Wang, X."
Now showing items 1-6 of 6
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16 QAM burst mode receiver for upstream communication over CATV networks
Codenie, Jan; Wang, X.; Everaert, Alain; Lambrecht, Peter; Vandewege, Jan; De Meyer, Kristin; Trog, W.; De Vleeshouwer, A. (1998) -
An investigation of field reduction effect on NBTI parameter characterization and lifetime prediction using a constant field stress method
Zhou, L.; Bo, T.; Ji, Z.; Yang, H.; Xu, H.; Liu, Q.; Simoen, Eddy; Wang, X.; Ma, X.; Li, Y.; Yin, H.; Du, A.; Zhao, C.; Wang, W. (2020) -
Insights into the effect of TiN thickness scaling on DC and AC NBTI characteristics in replacement metal gate pMOSFETs
Zhou, L.; Liu, Q.; Yang, H.; Ji, Z.; Xu, H.; Tang, B.; Simoen, Eddy; Jiang, H.; Luo, Y.; Wang, X.; Ma, X.; Li, Y.; Luo, J.; Yin, H.; Zhao, C.; Wang, W. (2020) -
Monolithic TCAD simulation of phase-change memory (PCM/PRAM) plus Ovonic Threshold Switch (OTS) selector device
Thesberg, M.; Stanojevic, Z.; Baumgartner, O.; Kernstock, C.; Leonelli, D.; Barci, M.; Wang, X.; Zhou, X.; Jiao, H.; Donadio, Gabriele Luca; Garbin, Daniele; Witters, Thomas; Kundu, Shreya; Hody, Hubert; Delhougne, Romain; Kar, Gouri Sankar; Karner, M. (2023) -
Reduction of NiGe/n- and p-Ge specific contact resistivity by enhanced dopant segregation in the presence of carbon during nickel germanidation
Duan, N.; Luo, J.; Wang, G.; Liu, J.; Simoen, Eddy; Mao, S.; Radamson, H.; Wang, X.; Li, J.; Wang, W.; Zhao, C.; Ye, T. (2016) -
Understanding frequency dependence of trap generation under AC negative bias temperature instability stress in Si p-FinFETs
Zhou, L.; Zhang, Q.; Yang, H.; Ji, Z.; Zhang, Z.; Liu, Q.; Xu, H.; Tang, B.; Simoen, Eddy; Ma, X.; Wang, X.; Li, Y.; Yin, H.; Luo, J.; Zhao, C.; Wang, W. (2020)