Browsing by author "Vandamme, Ewout"
Now showing items 1-20 of 34
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A high performance 0.18µm elevated source/drain technology with improved manufacturability
Augendre, Emmanuel; Rooyackers, Rita; Vandamme, Ewout; Perello, Carles; Van Dievel, Marc; Pochet, Sandrine; Badenes, Gonçal (1999) -
A new dummy-free shallow trench isolation concept for mixed-signal applications
Badenes, Gonçal; Rooyackers, Rita; Augendre, Emmanuel; Vandamme, Ewout; Perello, Carles; Heylen, Nancy; Grillaert, Joost; Deferm, Ludo (1999) -
A new dummy-free shallow trench isolation concept for mixed-signal applications
Badenes, Gonçal; Rooyackers, Rita; Augendre, Emmanuel; Vandamme, Ewout; Perello, Carles; Heylen, Nancy; Grillaert, Joost; Deferm, Ludo (2000) -
Accuracy assessment of the BSIM3v3 MOSFET compact model for large signal RF applications
Vandamme, Ewout; Schreurs, Dominique; van Dinther, Cees (2000) -
Applicability of non-linear modelling methods based on vectorial large-signal measurements to MOSFETs
Schreurs, Dominique; Vandamme, Ewout; Vandenberghe, S.; Carchon, Geert; Nauwelaers, Bart (2000) -
Critical discussion on unified 1/f noise models for MOSFETs
Vandamme, Ewout; Vandamme, Lorenz (2000) -
Current crowding and its effect on 1/f noise and third harmonic distortion - a case study for quality
Vandamme, Ewout; Vandamme, Lorenz (2000) -
Development of a RF large signal MOSFET model, based on an equivalent circuit, and comparison with the BSIM3v3 compact model
Vandamme, Ewout; Schreurs, Dominique; van Dinther, Cees; Badenes, Gonçal; Deferm, Ludo (2002) -
Diagnostics of the quality of MOSFETs
Vandamme, Ewout; Vandamme, Lorenz (1996) -
Elevated source/drain by sacrificial selective epitaxy for high performance deep submicron CMOS: process window versus complexity
Augendre, Emmanuel; Rooyackers, Rita; Caymax, Matty; Vandamme, Ewout; De Keersgieter, An; Perello, Carles; Van Dievel, Marc; Pochet, Sandrine; Badenes, Gonçal (2000) -
Evaluation of non-linear modelling techniques for MOSFETs based on vectorial large-signal measurements
Schreurs, Dominique; Vandenberghe, S.; Carchon, Geert; Nauwelaers, Bart; Vandamme, Ewout; Badenes, Gonçal; Deferm, Ludo (2000) -
Impact of MOSFET oxide breakdown on digital circuit operation and reliability
Kaczer, Ben; Degraeve, Robin; Groeseneken, Guido; Rasras, Mahmoud; Kubicek, Stefan; Vandamme, Ewout; Badenes, Gonçal (2000) -
Impact of non-quasi-static effects on the high-frequency small-signal behaviour of MOSFETs
Vandamme, Ewout; Badenes, Gonçal (2000) -
Impact of probe-to-pad contact degradation on the high-frequency charateristics of RF MOSFETs and guidelines to avoid it
Vandamme, Ewout; Schreurs, Dominique; Van Dinther, G. (2001) -
Impact of silicidation on the excess noise behaviour of MOS transistors
Vandamme, Ewout; Vandamme, L.K.J.; Claeys, Cor; Simoen, Eddy; Schreutelkamp, Rob (1995) -
Impact of silicon substrate, iron contamination and perimeter on saturation current and noise in n+p diodes
Vandamme, Lorenz; Vandamme, Ewout; Dobbelsteen, J. J. (1997) -
Improved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test-structures
Vandamme, Ewout; Schreurs, Dominique; Van Dinther, G. (2001) -
L-shape spacer architecture for low cost, high performance CMOS
Augendre, Emmanuel; Perello, Carles; Vandamme, Ewout; Pochet, Sandrine; Rooyackers, Rita; Beckx, Stephan; de Potter de ten Broeck, Muriel; Lauwers, A.; Badenes, Gonçal (2001) -
Large-signal model extraction and parameter estimation based on vectorial large-signal measurements
Schreurs, Dominique; Verspecht, J.; Vandenberghe, S.; Vandamme, Ewout; van Meer, Hans; van der Zanden, Koen; Carchon, Geert; Nauwelaers, Bart (1999) -
Low frequency noise analysis as a diagnostic tool to assess the quality of 0.25 μm Ti-silicided poly-lines
Vandamme, Ewout; De Wolf, Ingrid; Lauwers, Anne; Vandamme, Lorenz (1998)