Browsing by author "Alles, M.L."
Now showing items 1-5 of 5
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Charge collection mechanisms of Ge-channel bulk pMOSFETs
Samsel, Isaak; Zhang, E.X.; Sternberg, A.L.; Ni, K.; Reed, Robert; Fleedwood, Daniel; Alles, M.L.; Schrimpf, R.D.; Linten, Dimitri; Mitard, Jerome; Witters, Liesbeth; Collaert, Nadine (2015) -
Heavy ion and laser-induced transients in SiGe channel pMOSFETs
Zhang, E.X.; Samsel, I.K.; Bennett, W.G.; Hooten, N.C.; McCurdy, M.; Fleetwood, D.M.; Reed, R.A.; Alles, M.L.; Schrimpf, R.D.; Weller, R.A.; Linten, Dimitri; Mitard, Jerome (2013) -
Heavy-ion-induced current transients in bulk and SOI FinFETs
El-Mamouni, F.; Zhang, X.; Ball, D.R.; Sierawski, B.; King, M.P.; Schrimpf, R.D.; Reed, R.A.; Alles, M.L.; Fleetwood, D.M.; Linten, Dimitri; Simoen, Eddy; Vizkelethy, G. (2012) -
Pulsed-laser induced single-event transients in InGaAs FinFETs on bulk silicon substrates
Gong, H.; Ni, K.; Zhang, E.X.; Sternberg, A. L.; Kuzub, J.A.; Alles, M.L.; Reed, R.; Fleetwood, D.; Schrimpf, R.; Waldron, Niamh; Kunert, Bernardette; Linten, Dimitri (2019) -
Total ionizing dose effects on Ge channel pFETs with raised Si0.55Ge0.45 source drain
Wang, L.; Zhang, E.X.; Zhang, C.X.; Duan, G.X.; Schrimpf, R.D.; Fleetwood, D.M.; Reed, R.A.; Samsel, I.K.; Hachtel, J.; Alles, M.L.; Witters, Liesbeth; Collaert, Nadine; Linten, Dimitri; Mitard, Jerome; Pantelides, S.T.; Galloway, K.F. (2015)