Browsing by author "Stesmans, A."
Now showing items 1-6 of 6
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Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking
Franco, Jacopo; de Marneffe, Jean-Francois; Vandooren, Anne; Kimura, Yosuke; Nyns, Laura; Wu, Zhicheng; El-Sayed, A-M; Jech, M.; Waldhoer, D.; Claes, Dieter; Arimura, Hiroaki; Ragnarsson, Lars-Ake; Afanas'ev, V.; Stesmans, A.; Horiguchi, Naoto; Linten, Dimitri; Grasser, T.; Kaczer, Ben (2020) -
Electronic structure of NiO layers grown on Al2O3 and SiO2 using metallo-organic chemical vapour deposition
Chou, H. Y.; Badylevich, M.; Afanas'ev, V. V.; Houssa, M.; Stesmans, A.; Meersschaut, Johan; Goux, Ludovic; Kittl, Jorge; Wouters, Dirk (2011-12) -
Ge deep sub-micron pFETs with etched TaN metal gate on a High-K dielectric, fabricated in a 200mm silicon prototyping line
De Jaeger, Brice; Houssa, Michel; Satta, Alessandra; Kubicek, Stefan; Verheyen, Peter; Van Steenbergen, Jan; Croon, Jeroen; Kaczer, Ben; Van Elshocht, Sven; Delabie, Annelies; Kunnen, Eddy; Sleeckx, Erik; Teerlinck, Ivo; Lindsay, Richard; Schram, Tom; Chiarella, Thomas; Degraeve, Robin; Conard, Thierry; Poortmans, Jef; Winderickx, Gillis; Boullart, Werner; Schaekers, Marc; Mertens, Paul; Caymax, Matty; Vandervorst, Wilfried; Van Moorhem, Els; Biesemans, Serge; De Meyer, Kristin; Ragnarsson, Lars-Ake; Lee, S.; Kota, G.; Raskin, G.; Mijlemans, P.; Autran, J.L.; Afanas'ev, V.; Stesmans, A.; Meuris, Marc; Heyns, Marc (2004) -
Internal photoemission of electrons from 2D semiconductor/3D metal barrier structures
Shlyakhov, I; Achra, Swati; Bosman, N.; Asselberghs, Inge; Huyghebaert, Cedric; Radu, Iuliana; Chai, J.; Yang, M.; Wang, S. J.; Bol, A.; Iakoubovskii, K.; Houssa, Michel; Stesmans, A.; Afanas'ev, V. V. (2021) -
Investigation of Paramagnetic Defects in SiCN and SiCO-based Wafer Bonding
Peng, Lan; Kim, Soon-Wook; Iacovo, Serena; De Vos, Joeri; Schoenaers, B.; Stesmans, A.; Afanas'ev, V. V.; Miller, Andy; Beyer, Gerald; Beyne, Eric (2020) -
Measurement of direct and indirect bandgaps in synthetic ultrathin MoS2 and WS2 films from photoconductivity spectra
Shlyakhov, Ilya; Iakoubovskii, K.; Banerjee, Sreetama; Gaur, Abhinav; Lin, Dennis; Asselberghs, Inge; Radu, Iuliana; Chai, J.; Yang, M.; Wang, S. J.; Houssa, Michel; Stesmans, A.; Afanas'ev, V. (2021)