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Ge deep sub-micron pFETs with etched TaN metal gate on a High-K dielectric, fabricated in a 200mm silicon prototyping line
Publication:
Ge deep sub-micron pFETs with etched TaN metal gate on a High-K dielectric, fabricated in a 200mm silicon prototyping line
Date
2004
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
De Jaeger, Brice
;
Houssa, Michel
;
Satta, Alessandra
;
Kubicek, Stefan
;
Verheyen, Peter
;
Van Steenbergen, Jan
;
Croon, Jeroen
;
Kaczer, Ben
;
Van Elshocht, Sven
;
Delabie, Annelies
;
Kunnen, Eddy
;
Sleeckx, Erik
;
Teerlinck, Ivo
;
Lindsay, Richard
;
Schram, Tom
;
Chiarella, Thomas
;
Degraeve, Robin
;
Conard, Thierry
;
Poortmans, Jef
;
Winderickx, Gillis
;
Boullart, Werner
;
Schaekers, Marc
;
Mertens, Paul
;
Caymax, Matty
;
Vandervorst, Wilfried
;
Van Moorhem, Els
;
Biesemans, Serge
;
De Meyer, Kristin
;
Ragnarsson, Lars-Ake
;
Lee, S.
;
Kota, G.
;
Raskin, G.
;
Mijlemans, P.
;
Autran, J.L.
;
Afanas'ev, V.
;
Stesmans, A.
;
Meuris, Marc
;
Heyns, Marc
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1987
since deposited on 2021-10-15
Acq. date: 2025-10-22
Citations
Metrics
Views
1987
since deposited on 2021-10-15
Acq. date: 2025-10-22
Citations