Publication:
Ge deep sub-micron pFETs with etched TaN metal gate on a High-K dielectric, fabricated in a 200mm silicon prototyping line
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1993 since deposited on 2021-10-15
2last month
Acq. date: 2026-01-10
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Metrics
Views
1993 since deposited on 2021-10-15
2last month
Acq. date: 2026-01-10
Citations