Publication:

Ge deep sub-micron pFETs with etched TaN metal gate on a High-K dielectric, fabricated in a 200mm silicon prototyping line

Date

2004
Proceedings Paper
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dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorHoussa, Michel
dc.contributor.authorSatta, Alessandra
dc.contributor.authorKubicek, Stefan
dc.contributor.authorVerheyen, Peter
dc.contributor.authorVan Steenbergen, Jan
dc.contributor.authorCroon, Jeroen
dc.contributor.authorKaczer, Ben
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorDelabie, Annelies
dc.contributor.authorKunnen, Eddy
dc.contributor.authorSleeckx, Erik
dc.contributor.authorTeerlinck, Ivo
dc.contributor.authorLindsay, Richard
dc.contributor.authorSchram, Tom
dc.contributor.authorChiarella, Thomas
dc.contributor.authorDegraeve, Robin
dc.contributor.authorConard, Thierry
dc.contributor.authorPoortmans, Jef
dc.contributor.authorWinderickx, Gillis
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorVan Steenbergen, Jan
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorSleeckx, Erik
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorWinderickx, Gillis
dc.contributor.imecauthorBoullart, Werner
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecSleeckx, Erik::0000-0003-2560-6132
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-15T13:02:38Z
dc.date.available2021-10-15T13:02:38Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8764
dc.source.beginpage189
dc.source.conferenceProceedings of the 34th European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate21/09/2004
dc.source.conferencelocationLeuven Belgium
dc.source.endpage192
dc.title

Ge deep sub-micron pFETs with etched TaN metal gate on a High-K dielectric, fabricated in a 200mm silicon prototyping line

dc.typeProceedings paper
dspace.entity.typePublication
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