Browsing by author "Brouwers, Gijs"
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Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers
Simoen, Eddy; Brouwers, Gijs; Eneman, Geert; Bargallo Gonzalez, Mireia; De Jaeger, Brice; Mitard, Jerome; Brunco, David; Souriau, Laurent; Cody, N.; Thomas, S.; Meuris, Marc (2008) -
Is there an impact of threading dislocations on the characteristics of devices fabricated in strained-Ge substrates?
Simoen, Eddy; Brouwers, Gijs; Yang, Rui; Eneman, Geert; Bargallo Gonzalez, Mireia; Leys, Frederik; De Jaeger, Brice; Mitard, Jerome; Brunco, David; Souriau, Laurent; Cody, Nyles; Thomas, Shawn; Lajaunie, Luc; David, Marie-Laure (2009) -
Shallow boron implantations in Ge and the role of the pre-amorphization depth
Simoen, Eddy; Brouwers, Gijs; Satta, Alessandra; David, M.L.; Pailloux, F.; Parmentier, Brigitte; Clarysse, Trudo; Goossens, Jozefien; Vandervorst, Wilfried; Meuris, Marc (2008)