Browsing by author "Jacobs, Koen"

Accelerated aging of InGaN/GaN LED by electrical stressing

Jacobs, Koen; Cheyns, Jan; Van der Stricht, Wim; Moerman, Ingrid; Harrison, I. (1999)

Cathodoluminescence from an InGaN/GaN MQW grown on an epitaxially laterally overgrown GaN epilayer

Trager-Cowan, C.; Osborne, I.; Barisonzi, M.; Manson-Smith, S. K.; O'Donnell, K. P.; Jacobs, Koen; Moerman, Ingrid; Demeester, Piet (1999)

Cathodoluminescence from InGaN/GaN MQW grown on an epitaxially lateral overgrown GaN epilayer

Trager-Cowan, C.; Mohammed, A.; Manson-Smith, S. K.; O'Donnell, K. P.; Jacobs, Koen; Moerman, Ingrid; Demeester, Piet (1999)

Characterisation of epitaxial laterally overgrown Gallium Nitride using transmission electron microscopy

Tricker, D. M.; Jacobs, Koen; Humphreys, C. J. (1999)

Chemical mapping of InGaN MQWs

Sharma, N.; Tricker, D.; Thomas, P.; Bougrioua, Zahia; Jacobs, Koen; Cheyns, Jan; Moerman, Ingrid; Thrush, E. J.; Considine, L.; Boyd, A.; Humphreys, C. (2001)

Chemical mapping of V-defects in InGaN MQWs

Sharma, N.; Tricker, D. M.; Thomas, P. J.; Humphreys, C. J.; Bougrioua, Zahia; Jacobs, Koen; Cheyns, Jan; Moerman, Ingrid; Thrush, T.; Considine, L.; Boyd, A. (2000)

Chemical role of SF6 in a SiCl4-based reactive ion etching of GaN

Karouta, F.; Jacobs, B.; Kramer, M. C. J. C. M.; Jacobs, Koen; Moerman, Ingrid (1999)

Comparative study of structural properties and photoluminescence in InGaN layers with a high In content

Vantomme, Andre; Wu, Ming Fang; Hogg, S.; Langouche, G.; Jacobs, Koen; Moerman, Ingrid; White, M. E.; O'Donnell, K. P.; Nistor, Leona; Van Landuyt, J.; Bender, Hugo (2000)

Comparative study of structural properties and photoluminescence in InGaN layers with a high In content

Vantomme, Andre; Wu, Ming Fang; Hogg, S.; Langouche, G.; Jacobs, Koen; Moerman, Ingrid; White, M. E.; O'Donnell, K. P.; Nistor, Leona; Van Landuyt, J.; Bender, Hugo (2000)

Determination of crystal misorientation in epitaxial lateral overgrowth of GaN

Chen, W.M.; McNally, P.J.; Jacobs, Koen; Tuomi, T.; Danilewsky, A.N.; Zytkiewicz, Z.R.; Lowney, D.; Kanatharana, J.; Knuuttila, L.; Riikonen, J. (2002)

Development of GaN-materials for optoelectronic applications

Cheyns, Jan; Jacobs, Koen; Bougrioua, Zahia; Moerman, Ingrid (2000)

Direct determination of the composition and elastic strain in InGaN and AlGaN layers

Vantomme, Andre; Wu, Ming Fang; Hogg, S.; Langouche, G.; Yao, S.; Jacobs, Koen; Moerman, Ingrid; Li, J.; Zhang, G. Y. (1999)

Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer

Nistor, Leona; Bender, Hugo; Vantomme, Andre; Wu, Ming Fang; Van Landuyt, J.; O'Donnell, K. P.; Martin, R.; Jacobs, Koen; Moerman, Ingrid (2000)

Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures

Jacobs, Koen; Leys, Maarten; Moerman, Ingrid (2002)

Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD

Duxbury, N.; Dawson, P.; Bangert, U.; Thrush, E. J.; Van der Stricht, Wim; Jacobs, Koen; Moerman, Ingrid (1999)

Effects of carrier gas type on the properties of InGaN/GaN quantum well structures by MOCVD

Duxbury, N.; Dawson, P.; Bangert, U.; Thrush, E. J.; Van der Stricht, Wim; Jacobs, Koen; Moerman, Ingrid (1999)

Elastic strain in In0.18Ga0.82N layer: a combined x-ray diffraction and Rutherford backscattering/channeling study

Wu, Ming Fang; Vantomme, Andre; Hogg, S. M.; Langouche, G.; Van der Stricht, Wim; Jacobs, Koen; Moerman, Ingrid (1999)

Elastic strain in InGaN and AlGaN layers

Wu, Ming Fang; Yao, S.; Vantomme, Andre; Hogg, S.; Langouche, G.; Van der Stricht, Wim; Jacobs, Koen; Moerman, Ingrid; Li, J.; Zhang, G. Y. (1999)

Elastic strain in InGaN and AlGaN layers

Wu, Ming Fang; Vantomme, Andre; Hogg, S.; Langouche, G.; Van der Stricht, Wim; Jacobs, Koen; Moerman, Ingrid; Li, J.; Zhang, G. Y. (2000)

Electron energy loss studies at dislocations in GaN

Shang, P.; Bangert, U.; Harvey, A. J.; Duxbury, N.; Jacobs, Koen (1999)