Browsing by author "Pey, Kin Leong"
Now showing items 1-5 of 5
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Oxygen soluble gate electrodes for prolonged high-kappa gate-stack reliability
Raghavan, Nagarajan; Pey, Kin Leong; Wu, Xing; Liu, Wenhu; Li, Xiang; Bosman, Bosman; Kauerauf, Thomas (2011) -
Physical analysis of beakdown in High-k /metal gate stacks using TEM/EELS and STM for relibaility enhancement
Pey, Kin Leong; Raghavan, Nagarajan; Wu, Xing; Liu, Wenhu; Li, Xiang; Bosman, Michel; Shubhakar, Kalya; Lwin, Zin Zar; Chen, Yining; Qin, Hailang; Kauerauf, Thomas (2011) -
Random telegraph noise reduction in metal gate high-k stacks by bipolar switching and the performance boosting technique
Liu, Wenhu; Pey, Kin Leong; Raghavan, Nagarajan; Wu, Xing; Bosman, Michel; Kauerauf, Thomas (2011) -
Standards for the Characterization of Endurance in Resistive Switching Devices
Lanza, Mario; Waser, Rainer; Ielmini, Daniele; Yang, J. Joshua; Goux, Ludovic; Sune, Jordi; Kenyon, Anthony Joseph; Mehonic, Adnan; Spiga, Sabina; Rana, Vikas; Wiefels, Stefan; Menzel, Stephan; Valov, Ilia; Villena, Marco A.; Miranda, Enrique; Jing, Xu; Campabadal, Francesca; Gonzalez, Mireia B.; Aguirre, Fernando; Palumbo, Felix; Zhu, Kaichen; Roldan, Juan Bautista; Puglisi, Francesco Maria; Larcher, Luca; Hou, Tuo-Hung; Prodromakis, Themis; Yang, Yuchao; Huang, Peng; Wan, Tianqing; Chai, Yang; Pey, Kin Leong; Raghavan, Nagarajan; Duenas, Salvador; Wang, Tao; Xia, Qiangfei; Pazos, Sebastian (2021) -
Very low reset current for an RRAM device achieved in the oxygen-vacancy-controlled regime
Raghavan, Nagarajan; Pey, Kin Leong; Li, Xiang; Liu, Wenhu; Wu, Xing; Bosman, Michel; Kauerauf, Thomas (2011)