Browsing by author "Van Uffelen, Marco"
Now showing items 1-5 of 5
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Effect of airgap deep trench isolation on the gamma radiation behavior of a 0.13um SiGe:C NPN HBT technology
Put, Sofie; Simoen, Eddy; Van Huylenbroeck, Stefaan; Claeys, Cor; Van Uffelen, Marco; Leroux, Paul (2009) -
Impact of Si channel thickness and buried oxide quality on the proton radiation behavior of 65 nm FD SOI
Put, Sofie; Simoen, Eddy; Augendre, Emmanuel; Claeys, Cor; Van Uffelen, Marco; Leroux, Paul (2007-01) -
Influence of back-gate bias and process conditions on the gamma degradation of the transconductance of MuGFETs
Put, Sofie; Simoen, Eddy; Collaert, Nadine; De Keersgieter, An; Claeys, Cor; Van Uffelen, Marco; Leroux, Paul (2010) -
Influence of fin width on the total dose behavior of p-channe bulk MuGFETs
Put, Sofie; Simoen, Eddy; Jurczak, Gosia; Van Uffelen, Marco; Leroux, Paul; Claeys, Cor (2010) -
Proton and gamma radiation of 0.13 μm 200 GHz NPN SiGe:C HBTs featuring an airgap deep trench isolation
Put, Sofie; Qureshi, Mansoora; Simoen, Eddy; Van Huylenbroeck, Stefaan; Venegas, Rafael; Claeys, Cor; Van Uffelen, Marco; Leroux, Paul; Berghmans, Francis (2007)