Browsing by author "Leroux, P."

A 1.3dB NF CMOS LNA for GPS with 3kV HBM ESD-protection

Leroux, P.; Steyaert, M.; Vassilev, Vesselin; Groeseneken, Guido (2002-09)

A 1.6dB NF CMOS LNA for GPS with 3kV HBM ESD-protection

Leroux, P.; Steyaert, M.; Vassilev, Vesselin; Groeseneken, Guido (2002)

Co-design methodology to provide high esd protection levels in the advanced rf circuits

Vassilev, Vesselin; Thijs, Steven; Lajo-Segura, P.; Groeseneken, Guido; Wambacq, Piet; Leroux, P.; Steyaert, M.; Mahadeva Iyer, Natarajan; Maes, Herman (2003-09)

Effect of airgap deep trench isolation on the gamma radiation behavior of a 0.13 μm SiGe:C NPN HBT technology

Put, Sofie; Simoen, Eddy; Van Huylenbroeck, Stefaan; Claeys, Cor; Van Uffelen, Nick; Leroux, P. (2008)

Effect of rotation, gate-dielectric and SEG on the noise

Put, Sofie; Mehta, Harsh; Collaert, Nadine; Van Uffelen, M.; Leroux, P.; Simoen, Eddy; Claeys, Cor (2009)

Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs

Put, Sofie; Mehta, H.; Collaert, Nadine; Van Uffelen, M.; Leroux, P.; Claeys, Cor; Lukyanchikova, N.; Simoen, Eddy (2010)

Geometry and strain dependence of the proton radiation behavior of MuGFET devices

Put, Sofie; Simoen, Eddy; Collaert, Nadine; Claeys, Cor; Van Uffelen, M.; Leroux, P. (2007)

High ESD performance, low power CMOS LNS for GPS applications

Leroux, P.; Vassilev, Vesselin; Steyaert, M.; Maes, Herman (2003)

In-situ recovery of the base current of SiGe NPN HBTs at high gamma dose levels

Put, Sofie; Simoen, Eddy; Van Huylenbroeck, Stefaan; Claeys, Cor; Van Uffelen, M.; Leroux, P.; Berghmans, F. (2007)

Low-frequency noise analysis of g-irradiated p-channel bulk MuGFETs

Simoen, Eddy; Put, Sofie; Leroux, P.; Van Uffelen, M.; Jurczak, Gosia; Claeys, Cor (2010)

Radiation damage studies of strain-engineered and high-mobility deep submicrometer MOSFETs

Simoen, Eddy; Put, Sofie; Van Uffelen, Nick; Leroux, P.; Claeys, Cor; Ohyama, H.; Kulkarni, R.; Schrimpf, R.D.; Galloway, K.F. (2008)