Browsing by author "Parihar, Narendra"

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3D sequential low temperature top tier devices using dopant activation with excimer laser anneal and strained silicon as performance boosters

Vandooren, Anne; Wu, Zhicheng; Parihar, Narendra; Franco, Jacopo; Parvais, Bertrand; Matagne, Philippe; Debruyn, Haroen; Mannaert, Geert; Devriendt, Katia; Teugels, Lieve; Vecchio, Emma; Radisic, Dunja; Rosseel, Erik; Hikavyy, Andriy; Chan, BT; Waldron, Niamh; Mitard, Jerome; Besnard, G.; Alvarez, A.; Gaudin, G.; Schwarzenbach, W.; Radu, I.; Nguyen, B. Y.; Huet, K.; Tabata, T.; Mazzamuto, F.; Demuynck, Steven; Boemmels, Juergen; Collaert, Nadine; Horiguchi, Naoto (2020)
Channel Length Dependence of PBTI in High-k First RMG Gate Stack Integration Scheme

Parihar, Narendra; Arutchelvan, Goutham; Franco, Jacopo; Baudot, Sylvain; Opdebeeck, Ann; Demuynck, Steven; Arimura, Hiroaki; Ragnarsson, Lars-Ake; Mitard, Jerome; De Heyn, Vincent; Mercha, Abdelkarim (2021)
Cumulated charging mechanisms at gate processing in high-kappa first planar NMOS devices

Hiblot, Gaspard; Parihar, Narendra; Dupuy, Emmanuel; Mannaert, Geert; Baudot, Sylvain; Kaczer, Ben; De Heyn, Vincent; Mercha, Abdelkarim (2020)
Plasma Charging Damage in HK-First and HK-Last RMG NMOS Devices

Hiblot, Gaspard; Parihar, Narendra; Dupuy, Emmanuel; Mannaert, Geert; Baudot, Sylvain; Kaczer, Ben; Franco, Jacopo; Vandooren, Anne; De Heyn, Vincent; Mercha, Abdelkarim (2021)