Browsing by author "Blanquart, Timothee"
Now showing items 1-3 of 3
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Electrical characteristics of P-type bulk Si fin field-effect transistor using solid-source doping with 1-nm phosphosilicate glass
Kikuchi, Yoshiaki; Chiarella, Thomas; De Roest, David; Blanquart, Timothee; De Keersgieter, An; Kenis, Karine; Peter, Antony; Ong, Patrick; Van Besien, Els; Tao, Zheng; Kim, Min-Soo; Kubicek, Stefan; Chew, Soon Aik; Schram, Tom; Demuynck, Steven; Mocuta, Anda; Mocuta, Dan; Horiguchi, Naoto (2016) -
Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
Tomomi, Takayama; Taishi, Ebisudani; Eiichiro, Shiba; Sepulveda Marquez, Alfonso; Blanquart, Timothee; Kimura, Yosuke; Subramanian, Sujith; Baudot, Sylvain; Briggs, Basoene; Gupta, Anshul; Veloso, Anabela; Capogreco, Elena; Mertens, Hans; Meersschaut, Johan; Conard, Thierry; Dara, Praveen; Geypen, Jef; Martinez Alanis, Gerardo Tadeo; Batuk, Dmitry; Demuynck, Steven; Morin, Pierre (2021) -
Nanometer-deep junctions with high doping concentration for Ge SDEs using solid-source doping and flash lamp annealing
Tanimura, Hideaki; Fuse, Kazuhiko; Yamada, Takahiro; Aoyama, Takayuki; Kato, Shinichi; Kobayashi, Ippei; Blanquart, Timothee; Collaert, Nadine (2017-06)