Browsing by author "Das, Jo"
Now showing items 21-40 of 70
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Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN HFETs by Si substrate removal
Visalli, Domenica; Van Hove, Marleen; Srivastava, Puneet; Derluyn, Joff; Das, Jo; Leys, Maarten; Degroote, Stefan; Cheng, Kai; Germain, Marianne; Borghs, Gustaaf (2010) -
Field-effect saccharide sensing using AlGaN/GaN heterostructures and boronic acid based chemical receptors
Schuller, Tim A.; Kuball, Martin; Flower, Stephen E.; James, Tony D.; Fossey, John S.; Marcon, Denis; Das, Jo; Degroote, Stefan; Germain, Marianne; Sarua, Andrei (2011) -
GaN technology on high-resistivity Si-substrates for high-power-amplifiers
Das, Jo; Derluyn, Joff; Lorenz, Anne; Oprins, Herman; Xiao, Dongping; De Raedt, Walter; Cheng, Kai; Leys, Maarten; Degroote, Stefan; Germain, Marianne; Borghs, Gustaaf (2008) -
GaN-on-Si for power conversion
Germain, Marianne; Derluyn, Joff; Van Hove, Marleen; Medjdoub, Farid; Das, Jo; Marcon, Denis; Degroote, Stefan; Cheng, Kai; Leys, Maarten; Visalli, Domenica; Srivastava, Puneet; Geens, Karen; Viaene, John; Sijmus, Bram; Decoutere, Stefaan; Borghs, Gustaaf (2010) -
GaN-on-Si HEMT stress under high electric field condition
Marcon, Denis; Lorenz, Anne; Derluyn, Joff; Das, Jo; Medjdoub, Farid; Cheng, Kai; Degroote, Stefan; Leys, Maarten; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2008) -
GaN-on-Si HEMT stress under high electric field condition
Marcon, Denis; Lorenz, Anne; Derluyn, Joff; Das, Jo; Medjdoub, Farid; Cheng, Kai; Degroote, Stefan; Leys, Maarten; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2009) -
GaN-on-Si HEMTs Above 10 W/mm at 2 GHz together with high thermal stability at 325°C
Medjdoub, Farid; Marcon, Denis; Das, Jo; Derluyn, Joff; Cheng, Kai; Degroote, Stefan; Vellas, Nicolas; Gaquière, Christophe; Germain, Marianne; Decoutere, Stefaan (2010) -
GaN-on-Si power field effect transistors
Germain, Marianne; Derluyn, Joff; Van Hove, Marleen; Medjdoub, Farid; Das, Jo; Cheng, Kai; Degroote, Stefan; Leys, Maarten; Visalli, Domenica; Marcon, Denis; Geens, Karen; Viaene, John; Sijmus, Bram; Decoutere, Stefaan; Cartuyvels, Rudi; Borghs, Gustaaf (2010) -
High temperature on- and off-state stress of GaN-on- Si HEMTs with in-situ Si3N4 cap layer
Marcon, Denis; Medjdoub, Farid; Visalli, Domenica; Van Hove, Marleen; Derluyn, Joff; Das, Jo; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Decoutere, Stefaan; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2010) -
Hybrid epitaxial structures for spintronics
De Boeck, Jo; Van Roy, Wim; Liu, Zhiyu; Dessein, Kristof; Motsnyi, Vasyl; Das, Jo; Borghs, Gustaaf (2001) -
III-Nitrides electronics at IMEC: latest developments on SiC and large diameter Si substrates
Germain, Marianne; Degroote, Stefan; Derluyn, Joff; Leys, Maarten; Das, Jo; Motsnyi, Vasyl; Van Hove, Marleen; Cheng, Kai; Lorenz, Anne; Xiao, Dongping; Borghs, Gustaaf (2007) -
III-nitrides for high power switching devices based on large diameter GaN-on-Si technology
Germain, Marianne; Derluyn, Joff; Van Hove, Marleen; Degroote, Stefan; Das, Jo; Cheng, Kai; Borghs, Gustaaf (2009) -
Impact of surface preparation prior to ALD-Al2O3 deposition for PERC type solar cell
Rothschild, Aude; Toman, Janos; Penaud, Julien; Jaffrennou, Périne; Choulat, Patrick; Cornagliotti, Emanuele; Recaman Payo, Maria; Pawlak, Bartek; Das, Jo; Uruena De Castro, Angel; Singh, Sukhvinder; Horzel, Jörg (2012) -
Improved robustness of GaN-on-Si HEMTs under high electric field conditions by etching gate technology
Marcon, Denis; Lorenz, Anne; Derluyn, Joff; Das, Jo; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2008) -
In-situ passivation combined with GaN buffer optimization for extremely low current dispersion and low gate leakage in Si3N4/AlGaN/GaN HEMT devices on Si (111)
Germain, Marianne; Cheng, Kai; Derluyn, Joff; Degroote, Stefan; Das, Jo; Lorenz, Anne; Marcon, Denis; Van Hove, Marleen; Leys, Maarten; Borghs, Gustaaf (2008) -
InAs/(Al,Ga)Sb quantum well structures for magnetic sensors
Behet, Markus; Das, Jo; De Boeck, Jo; Borghs, Gustaaf (1998) -
Influence of pulse duration in picosecond laser ablation of silicon nitride layers
Schulz-Ruhtenberg, Malte; Trusheim, Daniel; Das, Jo; Krantz, Stephan; Wieduwilt, Jan (2011) -
Influence of thermal anneal steps on the current collapse of Fluorine treated enhancement mode SiN/AlGaN/GaN HEMTs
Lorenz, Anne; Derluyn, Joff; Das, Jo; Cheng, Kai; Degroote, Stefan; Medjdoub, Farid; Germain, Marianne; Borghs, Gustaaf (2009) -
Influence of ultra-short pulse laser ablation of silicon nitride passivation layers on electronical cell properties
Trusheim, Daniel; Schulz-Ruhtenberg, Malte; Smeets, M.; Das, Jo; Wieduwilt, J. (2011) -
Integrated AlGaN/GaN HEMTs in MCM-D technology
Liu, Rui; Schreurs, Dominique; De Raedt, Walter; Vanaverbeke, Fre; Das, Jo; Germain, Marianne; Mertens, Robert (2010)