Publication:
Improved robustness of GaN-on-Si HEMTs under high electric field conditions by etching gate technology
Date
Loading...
Journal
Abstract
Description
Statistics
Views
1786 since deposited on 2021-10-17
Acq. date: 2026-02-24
Citations
Statistics
Views
1786 since deposited on 2021-10-17
Acq. date: 2026-02-24
Citations