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Improved robustness of GaN-on-Si HEMTs under high electric field conditions by etching gate technology

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1795 since deposited on 2021-10-17
3last month
Acq. date: 2026-10-13

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Views

1795 since deposited on 2021-10-17
3last month
Acq. date: 2026-10-13

Citations