Browsing by author "Van Houtte, P."

Now showing items 1-6 of 6

Characterization of reduced-pressure chemical vapor deposition polycrystalline silicon germanium deposited at temperatures <= 550 degrees C

Sedky, S.; Witvrouw, Ann; Caymax, Matty; Saerens, A.; Van Houtte, P. (2002)
Effect of in situ boron doping on properties of silicon germanium films deposited by chemical vapor deposition at 400 degrees C

Sedky, Sherif; Witvrouw, Ann; Saerens, Annelies; Van Houtte, P.; Poortmans, Jef; Baert, Kris (2001)
Impact of Ni-silicide grain orientation on the strain and stress fields induced in patterned silicon

Torregiani, Cristina; Maex, Karen; Benedetti, Alessandro; Bender, Hugo; Van Houtte, P.; Pawlak, Bartek; Kittl, Jorge (2007)
Internal stresses in aluminium interconnects

Saerens, Annelies; Van Houtte, P.; Witvrouw, Ann (1999)
Internal stresses in aluminium interconnects

Saerens, Annelies; Van Houtte, P.; Witvrouw, Ann (2000)
The role of grain boundary structure on electromigration-induced drift in pure Al and Al(0.5wt% Cu)

Proost, Joris; Samajdar, I.; Verlinden, B.; Van Houtte, P.; Maex, Karen; Delaey, L. (1998)