Browsing by author "Robertson, J."
Now showing items 1-6 of 6
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Characterization of electron traps in Si-capped Ge MOSFETs with HfO2/SiO2 gate stack
Benbakhti, B.; Zhang, J.F.; Li, Z.; Zhang, W; Mitard, Jerome; Kaczer, Ben; Groeseneken, Guido; Hall, S.; Robertson, J.; Chalker, P. (2012) -
Characterization of negative-bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack
Ma, J.; Zhang, J.F.; Ji, Zhigang; Benbakhti, Brahim; Zhang, Wei Dong; Zheng, Xue Feng; Mitard, Jerome; Kaczer, Ben; Groeseneken, Guido; Hall, S.; Robertson, J.; Chalker, P. (2014) -
Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing scheme
Hatem, Firas Odai Hatem; Chai, Z.; Zhang, Wei; Fantini, Andrea; Degraeve, Robin; Clima, Sergiu; Garbin, Daniele; Robertson, J.; Guo, Y,; Zhang, J.F.; Marsland, John; Freitas, Pedro; Goux, Ludovic; Kar, Gouri Sankar (2019) -
Energy distribution of positive charges in Al2O3/GeO2/Ge pMOSFETs
Ma, J; Zhang, J. F.; Ji, Zhigang; Benbakhti, Brahim; Zhang, Wei; Mitard, Jerome; Kaczer, Ben; Groeseneken, Guido; Hall, S.; Robertson, J.; Chalker, P. (2014) -
State of transition metal catalysts during carbon nanotube growth
Hofmannn, S.; Blume, R.; Wirth, C.T.; Cantoro, Mirco; Sharma, R.; Ducati, C.; Havecker, M.; Zafeiratos, S.; Schoerch, P.; Oestereich, A.; Teschner, D.; Albrecht, M.; Knop-Gericke, A.; Schogl, R.; Robertson, J. (2009) -
Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structure
Ma, J; Zhang, J.F.; Ji, Z.; Benbakhti, B.; Duan, M.; Zhang, W.; Zheng, X.F.; Mitard, Jerome; Kaczer, Ben; Groeseneken, Guido; Hall, S.; Robertson, J.; Chalker, P. (2013)