Browsing by author "Lu, Augustin"
Now showing items 1-17 of 17
-
A 3D electrical characterization of single stacking faults in InP by conductive-AFM
Mannarino, Manuel; Celano, Umberto; Lu, Augustin; Chintala, Ravi Chandra; Paredis, Kristof; Vandervorst, Wilfried (2015) -
Ab initio simulations of novel 2D materials and interfaces for advanced ICT applications
Lu, Augustin (2017-02) -
First-principles study of the performance degradation of 2D channel-based transistors with sub-10 nm gate lengths
Lu, Augustin; Pourtois, Geoffrey; Stokbro, Kurt; Thean, Aaron; Radu, Iuliana; Houssa, Michel (2015) -
Heterostructures by inserting oxygen monolayers in Si: 2D nanolattice growth, electronic properties and MOSFET device characteristics
Jayachandran, Suseendran; Martens, Koen; Lu, Augustin; Nishio, Kengo; Pourtois, Geoffrey; Delabie, Annelies; Caymax, Matty; Heyns, Marc (2015) -
Impact of layer alignment on the behavior of MoS 2- ZrS 2 tunnel field-effect transistors: an ab initio study
Lu, Augustin; Houssa, Michel; Luisier, Mathieu; Pourtois, Geoffrey (2017) -
Interaction of silicene and germanene with non-metallic substrates
Houssa, Michel; Scalise, Emilio; Van den Broek, Bas; Lu, Augustin; Pourtois, Geoffrey; Afanasiev, Valeri; Stesmans, Andre (2014) -
Low-strain Si/O superlattices with tunable electronic properties: Ab initio calculations
Nishio, Kengo; Lu, Augustin; Pourtois, Geoffrey (2015) -
On the electrostatic control achieved in transistors based on multilayered MoS2: a first-principles study
Lu, Augustin; Pourtois, Geoffrey; Luisier, Mathieu; Radu, Iuliana; Houssa, Michel (2017-01) -
Origin of the performances degradation of 2D-based MOSFETs in the sub-10 nm regime: a first-principles study
Lu, Augustin; Pourtois, Geoffrey; Agarwal, Saurabh; Afzalian, Aryan; Radu, Iuliana; Houssa, Michel (2016) -
Oxygen in Si epitaxial growth: from interface contamination to Si/O superlattice engineering
Caymax, Matty; Jayachandran, Suseendran; Lu, Augustin; Delabie, Annelies; Loo, Roger; Hikavyy, Andriy; Pourtois, Geoffrey; Vandervorst, Wilfried; Heyns, Marc (2013-06) -
Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations
Pourtois, Geoffrey; Dabral, Ashish; Sankaran, Kiroubanand; Magnus, Wim; Yu, Hao; de Jamblinne de Meux, Albert; Lu, Augustin; Clima, Sergiu; Stokbro, Kurt; Schaekers, Marc; Houssa, Michel; Collaert, Nadine; Horiguchi, Naoto (2017) -
Silicene nanoribbons on transition metal dichalcogenide substrates: Effects on electronic structure and ballistic transport
van den Broek, Bas; Houssa, Michel; Lu, Augustin; Pourtois, Geoffrey; Afanas'ev, Valery; Stesmans, Andre (2016-08) -
The role of nonidealities in the scaling of MoS2 FETs
Verreck, Devin; Arutchelvan, Goutham; Lockhart de la Rosa, Cesar Javier; Leonhardt, Alessandra; Chiappe, Daniele; Lu, Augustin; Pourtois, Geoffrey; Matagne, Philippe; Heyns, Marc; De Gendt, Stefan; Mocuta, Anda; Radu, Iuliana (2018) -
Topological to trivial insulating phase transition in stanene
Houssa, Michel; van den Broek, Bas; Iordanidou, Konstantina; Lu, Augustin; Pourtois, Geoffrey; Locquet, Jean-Pierre; Afanas'ev, Valery; Stesmans, Andre (2016) -
Toward an understanding of the electric field-induced electrostatic doping in van der Waals heterostructures: a first-principles study
Lu, Augustin; Houssa, Michel; Radu, Iuliana; Pourtois, Geoffrey (2017) -
Tunneling transistors based on MoS2/MoTe2 Van der Waals heterostructures
Balaji, Yashwanth; Smets, Quentin; Lockhart de la Rosa, Cesar Javier; Lu, Augustin; Chiappe, Daniele; Agarwal Kumar, Tarun; Lin, Dennis; Huyghebaert, Cedric; Radu, Iuliana; Mocuta, Dan; Groeseneken, Guido (2017) -
Tunneling transistors based on MoS2/MoTe2 van der Waals heterostructures
Balaji, Yashwanth; Smets, Quentin; Lockhart de la Rosa, Cesar Javier; Lu, Augustin; Chiappe, Daniele; Agarwal Kumar, Tarun; Lin, Dennis; Huyghebaert, Cedric; Radu, Iuliana; Mocuta, Dan; Groeseneken, Guido (2018)