Publication:
Heterostructures by inserting oxygen monolayers in Si: 2D nanolattice growth, electronic properties and MOSFET device characteristics
Date
Loading...
Journal
Abstract
Description
Statistics
Views
1921 since deposited on 2021-10-22
Acq. date: 2026-02-24
Citations
Statistics
Views
1921 since deposited on 2021-10-22
Acq. date: 2026-02-24
Citations