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Heterostructures by inserting oxygen monolayers in Si: 2D nanolattice growth, electronic properties and MOSFET device characteristics

Date

2015
Meeting abstract
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dc.contributor.authorJayachandran, Suseendran
dc.contributor.authorMartens, Koen
dc.contributor.authorLu, Augustin
dc.contributor.authorNishio, Kengo
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorDelabie, Annelies
dc.contributor.authorCaymax, Matty
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorJayachandran, Suseendran
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.date.accessioned2021-10-22T19:54:36Z
dc.date.available2021-10-22T19:54:36Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25428
dc.source.beginpageT1.11
dc.source.conferenceAPS March Meeting
dc.source.conferencedate2/03/2014
dc.source.conferencelocationSan Antonio, TX USA
dc.title

Heterostructures by inserting oxygen monolayers in Si: 2D nanolattice growth, electronic properties and MOSFET device characteristics

dc.typeMeeting abstract
dspace.entity.typePublication
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