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Heterostructures by inserting oxygen monolayers in Si: 2D nanolattice growth, electronic properties and MOSFET device characteristics
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1925 since deposited on 2021-10-22
1last month
Acq. date: 2026-10-13
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Statistics
Views
1925 since deposited on 2021-10-22
1last month
Acq. date: 2026-10-13
Citations