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Heterostructures by inserting oxygen monolayers in Si: 2D nanolattice growth, electronic properties and MOSFET device characteristics
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1921 since deposited on 2021-10-22
2last month
Acq. date: 2025-12-15
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Views
1921 since deposited on 2021-10-22
2last month
Acq. date: 2025-12-15
Citations