Browsing by author "Sutar, Surajit"
Now showing items 1-20 of 22
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2D materials: roadmap to CMOS integration
Huyghebaert, Cedric; Schram, Tom; Smets, Quentin; Agarwal Kumar, Tarun; Verreck, Devin; Brems, Steven; Phommahaxay, Alain; Chiappe, Daniele; El Kazzi, Salim; Lockhart de la Rosa, Cesar Javier; Arutchelvan, Goutham; Cott, Daire; Ludwig, Jonathan; Gaur, Abhinav; Sutar, Surajit; Leonhardt, Alessandra; Marinov, Daniil; Lin, Dennis; Caymax, Matty; Asselberghs, Inge; Pourtois, Geoffrey; Radu, Iuliana (2018) -
ALD Encapsulation of CVD WS2 for Stable and High-Performance FET Devices
Wu, Xiangyu; Lin, Dennis; Cott, Daire; De Marneffe, Jean-Francois; Groven, Benjamin; Sergeant, Stefanie; Shi, Yuanyuan; Smets, Quentin; Sutar, Surajit; Asselberghs, Inge; Radu, Iuliana (2021) -
Challenges of Wafer-Scale Integration of 2D Semiconductors for High-Performance Transistor Circuits
Schram, Tom; Sutar, Surajit; Radu, Iuliana; Asselberghs, Inge (2022-12-01) -
Controlled sulfurization process for the synthesis of large area MoS2 films and MoS2-WS2 heterostructures
Chiappe, Daniele; Asselberghs, Inge; Sutar, Surajit; Iacovo, Serena; Afanasiev, Valeri; Stesmans, Andre; Balaji, Yashwanth; Peters, Lisanne; Heyne, Markus; Mannarino, Manuel; Vandervorst, Wilfried; Sayan, Safak; Huyghebaert, Cedric; Caymax, Matty; Heyns, Marc; De Gendt, Stefan; Radu, Iuliana; Thean, Aaron (2016) -
Dielectric properties of spin-on metal oxides and their applications for 2D semiconductor devices
Sayan, Safak; Lin, Dennis; Asselberghs, Inge; Chiappe, Daniele; Sutar, Surajit; Radu, Iuliana; Thean, Aaron; Petermann, Claire; Hong, Sung Eun (2016) -
Dual gate synthetic MoS2 MOSFETs with 4.56 mu F/cm(2) channel capacitance, 320 mu S/mu m Gm and 420 mu A/mu m Id at 1V Vd/100nm Lg
Wu, Xiangyu; Cott, Daire; Lin, Zaoyang; Shi, Yuanyuan; Groven, Benjamin; Morin, Pierre; Verreck, Devin; Smets, Quentin; Medina, Henry; Sutar, Surajit; Asselberghs, Inge; Radu, Iuliana; Lin, Dennis (2021) -
Dual gate synthetic WS2 MOSFETs with 120 mu S/mu m Gm 2.7 mu F/cm(2) capacitance and ambipolar channel
Lin, Dennis; Wu, Xiangyu; Cott, Daire; Verreck, Devin; Groven, Benjamin; Sergeant, Stefanie; Smets, Quentin; Sutar, Surajit; Asselberghs, Inge; Radu, Iuliana (2020) -
Extreme scaling enabled by MX2 transistors: variability challenges (invited)
Smets, Quentin; Arutchelvan, Goutham; Schram, Tom; Verreck, Devin; Groven, Benjamin; Cott, Daire; Ahmed, Zubair; Shi, Yuanyuan; Sutar, Surajit; Nalin Mehta, Ankit; Lin, Dennis; Asselberghs, Inge; Radu, Iuliana (2021) -
FETs on 2-D materials: deconvolution of the channel and contact characteristics by four-terminal resistance measurements on WSe2 transistors
Sutar, Surajit; Asselberghs, Inge; Lin, Dennis; Thean, Aaron; Radu, Iuliana (2017) -
Graphene based Van der Waals contacts on MoS(2)field effect transistors
Koladi Mootheri, Vivek; Arutchelvan, Goutham; Banerjee, Sreetama; Sutar, Surajit; Leonhardt, Alessandra; Boulon, Marie-Emmanuelle; Huyghebaert, Cedric; Houssa, Michel; Asselberghs, Inge; Radu, Iuliana; Heyns, Marc; Lin, Dennis (2021) -
Impact of device scaling on the electrical properties of MoS2 field-effect transistors
Arutchelvan, Goutham; Smets, Quentin; Verreck, Devin; Ahmed, Zubair; Gaur, Abhinav; Sutar, Surajit; Jussot, Julien; Groven, Benjamin; Heyns, Marc; Lin, Dennis; Asselberghs, Inge; Radu, Iuliana (2021) -
Introducing 2D-FETs in Device Scaling Roadmap using DTCO
Ahmed, Zubair; Afzalian, Aryan; Schram, Tom; Jang, Doyoung; Verreck, Devin; Smets, Quentin; Schuddinck, Pieter; Chehab, Bilal; Sutar, Surajit; Arutchelvan, Goutham; Soussou, Assawer; Asselberghs, Inge; Spessot, Alessio; Radu, Iuliana; Parvais, Bertrand; Ryckaert, Julien; Na, Myung Hee (2020) -
Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity
Chiappe, Daniele; Ludwig, Jonathan; Leonhardt, Alessandra; El Kazzi, Salim; Nalin Mehta, Ankit; Nuytten, Thomas; Celano, Umberto; Sutar, Surajit; Pourtois, Geoffrey; Caymax, Matty; Paredis, Kristof; Vandervorst, Wilfried; Lin, Dennis; De Gendt, Stefan; Barla, Kathy; Huyghebaert, Cedric; Asselberghs, Inge; Radu, Iuliana (2018) -
Layer-controlled, wafer-scale fabrication of 2D semiconductor materials
Chiappe, Daniele; Afanasiev, Valeri; Tomczak, Yoann; Sutar, Surajit; Leonhardt, Alessandra; Ludwig, Jonathan; Celano, Umberto; Brems, Steven; Dabral, Ashish; Pourtois, Geoffrey; Caymax, Matty; Schram, Tom; Huyghebaert, Cedric; Asselberghs, Inge; De Gendt, Stefan; Radu, Iuliana (2018) -
Modulating the resistivity of MoS2 through low energy phosphorus plasma implantation
Haynes, K.; Murray, R.; Weinrich, Z.; Zhao, X.; Chiappe, Daniele; Sutar, Surajit; Radu, Iuliana; Hatem, C.; Perry, S; Jones, K (2017) -
Polarity control in WSe2 double-gate transistors
Resta, Giovanni; Sutar, Surajit; Balaji, Yashwanth; Lin, Dennis; Raghavan, Praveen; Radu, Iuliana; Catthoor, Francky; Thean, Aaron; Gaillardon, Pierre-Emmanuel; De Micheli, Giovanni (2016) -
Sources of variability in scaled MoS2 FETs
Smets, Quentin; Verreck, Devin; Shi, Yuanyuan; Arutchelvan, Goutham; Groven, Benjamin; Wu, Xiangyu; Sutar, Surajit; Banerjee, Sreetama; Nalin Mehta, Ankit; Lin, Dennis; Asselberghs, Inge; Radu, Iuliana (2020) -
Spin-on-diffussants for doping in transition metal dichalcogenide semiconductors
Sutar, Surajit; Chiappe, Daniele; Nuytten, Thomas; Conard, Thierry; Asselberghs, Inge; Lin, Dennis; Radu, Iuliana (2019) -
Study of Contact Resistance Components in Short-Channel Indium-Gallium-Zinc-Oxide Transistor
Tang, Hongwei; Dekkers, Harold; Rassoul, Nouredine; Sutar, Surajit; Subhechha, Subhali; Afanasiev, Valeri; Van Houdt, Jan; Delhougne, Romain; Kar, Gouri Sankar; Belmonte, Attilio (2024) -
Superior electrostatic control in uniform monolayer MoS2 scaled transistors via in-situ surface smoothening
Shi, Yuanyuan; Groven, Benjamin; Smets, Quentin; Sutar, Surajit; Banerjee, Sreetama; Medina, Henry; Wu, Xiangyu; Huyghebaert, Cedric; Brems, Steven; Lin, Dennis; Morin, Pierre; Caymax, Matty; Asselberghs, Inge; Radu, Iuliana (2021)