Browsing by author "Houdellier, F."
Now showing items 1-3 of 3
-
Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs
Serra, N.; Conzatti, F.; Esseni, D.; De Michielis, M.; Palestri, P.; Selmi, L.; Thomas, S.; Whall, T. E.; Parker, E. H. C.; Leadley, D. R.; Witters, Liesbeth; Hikavyy, Andriy; Hytch, M. J.; Houdellier, F.; Snoeck, E.; Wang, T. J.; Lee, W. C.; Vellianitis, Georgios; Van Dal, Mark; Duriez, Blandine; Doornbos, Gerben; Lander, Rob (2009) -
Strain measurements in electronic devices by aberration-corrected HRTEM and dark-field holography
Hue, Florent; Houdellier, F.; Snoeck, E.; Hartmann, J.P.; Destefanis, V.; Bender, Hugo; Claverie, Alain; Hytch, Martin (2008-09) -
Strain measurements in transistors by dark-field holography
Hue, Florent; Houdellier, F.; Bender, Hugo; Snoeck, E.; Hytch, M.J. (2009)